Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction

Yutaka Oyama; Takeo Ohno; Ken Suto; Jun Ichi Nishizawa

doi:10.1149/1.1639023

Effects of AsH₃ Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Effects of AsH₃ surface treatment just prior to regrowth on ultrashallow (49 nm) p⁺n⁺ GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm^-2, and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH³ surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.

Original language	English
Pages (from-to)	G131-G135
Journal	Journal of the Electrochemical Society
Volume	151
Issue number	2
DOIs	https://doi.org/10.1149/1.1639023
Publication status	Published - 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1639023

Cite this

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abstract = "Effects of AsH3 surface treatment just prior to regrowth on ultrashallow (49 nm) p+n+ GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm-2, and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH3 surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.",

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AU - Nishizawa, Jun Ichi

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AB - Effects of AsH3 surface treatment just prior to regrowth on ultrashallow (49 nm) p+n+ GaAs sidewall tunnel junction characteristics were investigated. Fabricated tunnel junctions have shown extremely high record peak current density of 37,000 A cm-2, and the surface treatment just prior to regrowth has shown great reduction of the valley current by a factor of 4 and the improvement in peak-to-valley current ratio has been achieved by a factor of 2.6. Mechanism of the AsH3 surface treatment effects are discussed in view of the control of surface stoichiometry and related interface phenomena.

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