Effects of base layer thickness on reliability of CVD Si₃N₄ stack gate dielectrics

Engineering

• Base Layer 83%
• Layer Thickness 66%
• Reliability 33%
• Gate Dielectric 33%
• Performance 33%
• Thickness 33%
• Measurement 16%
• Polarity 16%
• Capacitance 16%
• Si Interface 16%
• Film Property 16%
• Strained Layer 16%
• Obtains 16%
• Handling Quality 16%

Material Science

• Silicon Nitride 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Dielectric Material 50%
• Oxide 16%
• Electrical Property 16%
• X-Ray Photoelectron Spectroscopy 16%