Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

M. Kodzuka; T. Ohkubo; K. Hono; S. Ikeda; H. D. Gan; H. Ohno

doi:10.1063/1.3688039

Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

M. Kodzuka, T. Ohkubo, K. Hono, S. Ikeda, H. D. Gan, H. Ohno

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co ₂₅Fe ₇₅) _100-xB _x/MgO/ (Co ₂₅Fe ₇₅) _100-xB _x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co ₂₅Fe ₇₅) ₆₇B ₃₃, while good epitaxy was observed between (001) textured MgO and (Co ₂₅Fe ₇₅) ₇₈B ₂₂ electrodes.

Original language	English
Article number	043913
Journal	Journal of Applied Physics
Volume	111
Issue number	4
DOIs	https://doi.org/10.1063/1.3688039
Publication status	Published - 2012 Feb 15

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title = "Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions",

abstract = "The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co 25Fe 75) 100-xB x/MgO/ (Co 25Fe 75) 100-xB x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co 25Fe 75) 67B 33, while good epitaxy was observed between (001) textured MgO and (Co 25Fe 75) 78B 22 electrodes.",

author = "M. Kodzuka and T. Ohkubo and K. Hono and S. Ikeda and Gan, {H. D.} and H. Ohno",

note = "Funding Information: M.K. acknowledges the National Institute for Materials Science (NIMS) for the NIMS junior researcher assistantship. This work was in part supported by a Grant-in-Aid for Scientific Research in Priority Area Creation and Control of Spin Current and the Funding Program for World-Leading Innovative R & D on Science and Technology (FIRST Program) of JSPS. ",

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doi = "10.1063/1.3688039",

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AU - Kodzuka, M.

AU - Ohkubo, T.

AU - Hono, K.

AU - Ikeda, S.

AU - Gan, H. D.

AU - Ohno, H.

N1 - Funding Information: M.K. acknowledges the National Institute for Materials Science (NIMS) for the NIMS junior researcher assistantship. This work was in part supported by a Grant-in-Aid for Scientific Research in Priority Area Creation and Control of Spin Current and the Funding Program for World-Leading Innovative R & D on Science and Technology (FIRST Program) of JSPS.

PY - 2012/2/15

Y1 - 2012/2/15

N2 - The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co 25Fe 75) 100-xB x/MgO/ (Co 25Fe 75) 100-xB x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co 25Fe 75) 67B 33, while good epitaxy was observed between (001) textured MgO and (Co 25Fe 75) 78B 22 electrodes.

AB - The effect of B concentration on the tunneling magnetoresistance (TMR) of (Co 25Fe 75) 100-xB x/MgO/ (Co 25Fe 75) 100-xB x (x = 22 and 33) pseudo-spin-valve (P-SV) magnetic tunnel junctions (MTJs) was investigated. The TMR ratios for optimally annealed MTJs with x 22 and 33 were 340% and 170%, respectively, at room temperature. High resolution transmission electron microscopy (HRTEM) observation showed a weaker (001) texture in the MgO barrier in the MTJ with x = 33. The bottom electrode was not fully crystallized even with a considerable amount of B in the (Co 25Fe 75) 67B 33, while good epitaxy was observed between (001) textured MgO and (Co 25Fe 75) 78B 22 electrodes.

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Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions

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