Effects of controlled As pressure annealing on deep levels of liquid-encapsulated Czochralski GaAs single crystals

Shigefusa Chichibu; Norio Ohkubo; Satoru Matsumoto

doi:10.1063/1.341358

Effects of controlled As pressure annealing on deep levels of liquid-encapsulated Czochralski GaAs single crystals

Shigefusa Chichibu, Norio Ohkubo, Satoru Matsumoto

IMRAM - Division of Measurements

Keio University

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Effects of controlled arsenic vapor pressure thermal treatments on deep levels of liquid-encapsulated Czochralski (LEC) GaAs, especially on the midgap donor EL2, are investigated. Undoped LEC n-type conductive and semi-insulating GaAs crystals are annealed in vacuum or under As vapor pressure. From depth profiles of EL2 concentration, it is confirmed that the thermal conversion on semi-insulating GaAs is caused by the reduction of EL2 concentration and the introduction of native acceptor (V_As). A three-step model for EL2 out-diffusion is proposed. The formation of EL2 occurs during the cooling process at a relatively low temperature of around 650 °C.

Original language	English
Pages (from-to)	3987-3993
Number of pages	7
Journal	Journal of Applied Physics
Volume	64
Issue number	8
DOIs	https://doi.org/10.1063/1.341358
Publication status	Published - 1988

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abstract = "Effects of controlled arsenic vapor pressure thermal treatments on deep levels of liquid-encapsulated Czochralski (LEC) GaAs, especially on the midgap donor EL2, are investigated. Undoped LEC n-type conductive and semi-insulating GaAs crystals are annealed in vacuum or under As vapor pressure. From depth profiles of EL2 concentration, it is confirmed that the thermal conversion on semi-insulating GaAs is caused by the reduction of EL2 concentration and the introduction of native acceptor (VAs). A three-step model for EL2 out-diffusion is proposed. The formation of EL2 occurs during the cooling process at a relatively low temperature of around 650 °C.",

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AU - Chichibu, Shigefusa

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PY - 1988

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N2 - Effects of controlled arsenic vapor pressure thermal treatments on deep levels of liquid-encapsulated Czochralski (LEC) GaAs, especially on the midgap donor EL2, are investigated. Undoped LEC n-type conductive and semi-insulating GaAs crystals are annealed in vacuum or under As vapor pressure. From depth profiles of EL2 concentration, it is confirmed that the thermal conversion on semi-insulating GaAs is caused by the reduction of EL2 concentration and the introduction of native acceptor (VAs). A three-step model for EL2 out-diffusion is proposed. The formation of EL2 occurs during the cooling process at a relatively low temperature of around 650 °C.

AB - Effects of controlled arsenic vapor pressure thermal treatments on deep levels of liquid-encapsulated Czochralski (LEC) GaAs, especially on the midgap donor EL2, are investigated. Undoped LEC n-type conductive and semi-insulating GaAs crystals are annealed in vacuum or under As vapor pressure. From depth profiles of EL2 concentration, it is confirmed that the thermal conversion on semi-insulating GaAs is caused by the reduction of EL2 concentration and the introduction of native acceptor (VAs). A three-step model for EL2 out-diffusion is proposed. The formation of EL2 occurs during the cooling process at a relatively low temperature of around 650 °C.

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Effects of controlled As pressure annealing on deep levels of liquid-encapsulated Czochralski GaAs single crystals

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