Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si3N4 cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO2 on a Si3N4 cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO2 cap and Si3N4 cap, respectively.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 1999 Aug 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)