Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

Yasuo Kimura; Masato Kishi; Takashi Katoda

doi:10.1063/1.371042

Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

Yasuo Kimura, Masato Kishi, Takashi Katoda

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si₃N₄ cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO₂ on a Si₃N₄ cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO₂ cap and Si₃N₄ cap, respectively.

Original language	English
Pages (from-to)	2278-2280
Number of pages	3
Journal	Journal of Applied Physics
Volume	86
Issue number	4
DOIs	https://doi.org/10.1063/1.371042
Publication status	Published - 1999 Aug 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.371042

Cite this

@article{19320c502ca64d8196e5364f517ce24e,

title = "Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon",

abstract = "Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si3N4 cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO2 on a Si3N4 cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO2 cap and Si3N4 cap, respectively.",

author = "Yasuo Kimura and Masato Kishi and Takashi Katoda",

year = "1999",

month = aug,

day = "15",

doi = "10.1063/1.371042",

language = "English",

volume = "86",

pages = "2278--2280",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

AU - Kimura, Yasuo

AU - Kishi, Masato

AU - Katoda, Takashi

PY - 1999/8/15

Y1 - 1999/8/15

N2 - Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si3N4 cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO2 on a Si3N4 cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO2 cap and Si3N4 cap, respectively.

AB - Laser Raman spectroscopy is used to study the compressive stress effects introduced by Si3N4 cap on solid-phase crystallization of amorphous Si (a-Si). It is shown that additional cap of SiO2 on a Si3N4 cap increases speed of crystallization while increasing the stress decreases this speed. Tensile stress and relaxed compressive stress in an a-Si film can be introduced by SiO2 cap and Si3N4 cap, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0032607712&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032607712&partnerID=8YFLogxK

U2 - 10.1063/1.371042

DO - 10.1063/1.371042

M3 - Article

AN - SCOPUS:0032607712

SN - 0021-8979

VL - 86

SP - 2278

EP - 2280

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this