TY - JOUR
T1 - Effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy of diamond with pure methane
AU - Nishimori, Toshihiko
AU - Sakamoto, Hitoshi
AU - Takakuwa, Yuji
AU - Kono, Shozo
PY - 1997/3
Y1 - 1997/3
N2 - We investigated the effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy (GSMBE) of diamond with pure methane (CH4). Irradiating the C(001) surface with a 200 eV electron-beam at 800°C enhanced the growth rate (GR) ∼2-5 times over the method without irradiation. By using a CH4 beam decomposed by electron impact in addition to the electron-beam irradiation, the GR was enhanced by > 100 times. However, the grown films contained an appreciable amount of amorphous carbon. By contrast, irradiating the surface with an atomic hydrogen beam enhanced the GR by about five-fold without the concurrent growth of amorphous carbon.
AB - We investigated the effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy (GSMBE) of diamond with pure methane (CH4). Irradiating the C(001) surface with a 200 eV electron-beam at 800°C enhanced the growth rate (GR) ∼2-5 times over the method without irradiation. By using a CH4 beam decomposed by electron impact in addition to the electron-beam irradiation, the GR was enhanced by > 100 times. However, the grown films contained an appreciable amount of amorphous carbon. By contrast, irradiating the surface with an atomic hydrogen beam enhanced the GR by about five-fold without the concurrent growth of amorphous carbon.
KW - Atomic hydrogen
KW - Chemical vapor deposition
KW - Diamond
KW - Electron
UR - http://www.scopus.com/inward/record.url?scp=0001693496&partnerID=8YFLogxK
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U2 - 10.1016/s0925-9635(96)00763-7
DO - 10.1016/s0925-9635(96)00763-7
M3 - Article
AN - SCOPUS:0001693496
SN - 0925-9635
VL - 6
SP - 463
EP - 467
JO - Diamond and Related Materials
JF - Diamond and Related Materials
IS - 2-4
ER -