We investigated the effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy (GSMBE) of diamond with pure methane (CH4). Irradiating the C(001) surface with a 200 eV electron-beam at 800°C enhanced the growth rate (GR) ∼2-5 times over the method without irradiation. By using a CH4 beam decomposed by electron impact in addition to the electron-beam irradiation, the GR was enhanced by > 100 times. However, the grown films contained an appreciable amount of amorphous carbon. By contrast, irradiating the surface with an atomic hydrogen beam enhanced the GR by about five-fold without the concurrent growth of amorphous carbon.
- Atomic hydrogen
- Chemical vapor deposition