Effects of GaN thin layer on InGaN at electrolyte-semiconductor interface for the application of photoelectrochemical water splitting

Chemistry

• Indium 100%
• Photocurrent 25%
• Phase Composition 25%
• Density 25%
• Semiconductor 16%
• Band Gap 8%
• UV/VIS Spectroscopy 8%
• Tunneling 8%
• Structure 8%
• Energy 8%
• Application 8%
• Electrolyte 8%

Engineering

• Photocurrent 25%
• Density 25%
• Hydrogen Generation 16%
• Crystal Quality 16%
• Band Edge 16%
• Nitride Semiconductor 16%
• Water Splitting 8%
• Thin Layer 8%
• Light Absorption 8%
• Energy Gap 8%
• Conduction Band Edge 8%
• Low Growth Temperature 8%
• Electrolyte Interface 8%
• Edge Energy 8%
• Applications 8%
• Properties 8%
• Lower Crystal 8%

Material Science

• Semiconductor Material 16%
• Photoelectrochemical Water Splitting 8%
• Electrolyte 8%