Effects of interlayer and annealing on chemical states of HfO2 gate insulators studied by photoemission spectroscopy

S. Toyoda; J. Okabayashi; H. Kumigashira; M. Oshima; K. Ono; M. Niwa; K. Usuda; G. L. Liu

doi:10.1063/1.1689393

Effects of interlayer and annealing on chemical states of HfO₂ gate insulators studied by photoemission spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, G. L. Liu

IMRAM - Division of Inorganic Material Research

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The effects of Hf-metal predeposition and annealing on chemical states of HfO₂ gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.

Original language	English
Pages (from-to)	2328-2330
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	13
DOIs	https://doi.org/10.1063/1.1689393
Publication status	Published - 2004 Mar 29

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abstract = "The effects of Hf-metal predeposition and annealing on chemical states of HfO2 gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.",

author = "S. Toyoda and J. Okabayashi and H. Kumigashira and M. Oshima and K. Ono and M. Niwa and K. Usuda and Liu, {G. L.}",

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AU - Toyoda, S.

AU - Okabayashi, J.

AU - Kumigashira, H.

AU - Oshima, M.

AU - Ono, K.

AU - Niwa, M.

AU - Usuda, K.

AU - Liu, G. L.

PY - 2004/3/29

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N2 - The effects of Hf-metal predeposition and annealing on chemical states of HfO2 gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.

AB - The effects of Hf-metal predeposition and annealing on chemical states of HfO2 gate insulators was investigated. The photoemission spectroscopy was used for the study. It was observed that the growth of interface layer was effectively reduced by Hf-metal predeposition. The annealing at 1000 °C was found to cause the formation of metallic Hf and Hf-silicide clusters in the gate insulators.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Effects of interlayer and annealing on chemical states of HfO₂ gate insulators studied by photoemission spectroscopy

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