Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing

J. A. Ng; Y. Kuroki; N. Sugii; K. Kakushima; S. I. Ohmi; K. Tsutsui; T. Hattori; H. Iwai; H. Wong

doi:10.1016/j.mee.2005.04.019

Effects of low temperature annealing on the ultrathin La₂O ₃ gate dielectric; Comparison of post deposition annealing and post metallization annealing

J. A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S. I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong

Research output: Contribution to journal › Conference article › peer-review

43 Citations (Scopus)

Abstract

This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La₂O₃ gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (V_FB) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm² /Vs.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.019
Publication status	Published - 2005 Jun 17
Externally published	Yes
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 2005 Jun 22 → 2005 Jun 24

Keywords

Gate Dielectric
High-k
LaO
MOSFET
Post-Deposition Annealing
Post-Metallization Annealing

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2005.04.019

Cite this

@article{a5ec0af7b8d9440da1ca2d509611cc06,

title = "Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing",

abstract = "This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La2O3 gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (VFB) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm2 /Vs.",

keywords = "Gate Dielectric, High-k, LaO, MOSFET, Post-Deposition Annealing, Post-Metallization Annealing",

author = "Ng, {J. A.} and Y. Kuroki and N. Sugii and K. Kakushima and Ohmi, {S. I.} and K. Tsutsui and T. Hattori and H. Iwai and H. Wong",

note = "Funding Information: This work was partially supported by the Semiconductor Technology Academic Research Center (STARC) and Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science, and Technology, Japan.; 14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.019",

language = "English",

volume = "80",

pages = "206--209",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "SUPPL.",

}

TY - JOUR

T1 - Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing

AU - Ng, J. A.

AU - Kuroki, Y.

AU - Sugii, N.

AU - Kakushima, K.

AU - Ohmi, S. I.

AU - Tsutsui, K.

AU - Hattori, T.

AU - Iwai, H.

AU - Wong, H.

N1 - Funding Information: This work was partially supported by the Semiconductor Technology Academic Research Center (STARC) and Special Coordination Funds for Promoting Science and Technology by Ministry of Education, Culture, Sports, Science, and Technology, Japan.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La2O3 gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (VFB) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm2 /Vs.

AB - This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La2O3 gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (VFB) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm2 /Vs.

KW - Gate Dielectric

KW - High-k

KW - LaO

KW - MOSFET

KW - Post-Deposition Annealing

KW - Post-Metallization Annealing

UR - http://www.scopus.com/inward/record.url?scp=19944413995&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944413995&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.04.019

DO - 10.1016/j.mee.2005.04.019

M3 - Conference article

AN - SCOPUS:19944413995

SN - 0167-9317

VL - 80

SP - 206

EP - 209

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -