Effects of metal buffer layer on the morphology of the ZnO columns

Xia Feng; Xiaoli Yuan; Takashi Sekiguchi; Masami Terauchi; Shin Tsunekawa; Shun Ito; Junyong Kang

doi:10.1109/SIM.2005.1511407

Effects of metal buffer layer on the morphology of the ZnO columns

Xia Feng, Xiaoli Yuan, Takashi Sekiguchi, Masami Terauchi, Shin Tsunekawa, Shun Ito, Junyong Kang

IMRAM - Division of Measurements

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.

Original language	English
Title of host publication	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Pages	156-159
Number of pages	4
DOIs	https://doi.org/10.1109/SIM.2005.1511407
Publication status	Published - 2005
Event	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China Duration: 2004 Sept 20 → 2004 Sept 25

Publication series

Name	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
Volume	2005

Conference

Conference	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Country/Territory	China
City	Beijing
Period	04/9/20 → 04/9/25

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10.1109/SIM.2005.1511407

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Feng, X., Yuan, X., Sekiguchi, T., Terauchi, M., Tsunekawa, S., Ito, S., & Kang, J. (2005). Effects of metal buffer layer on the morphology of the ZnO columns. In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (pp. 156-159). Article 1511407 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2005). https://doi.org/10.1109/SIM.2005.1511407

@inproceedings{208d162ca1c841fab8fc8f9cca86a923,

title = "Effects of metal buffer layer on the morphology of the ZnO columns",

abstract = "ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.",

author = "Xia Feng and Xiaoli Yuan and Takashi Sekiguchi and Masami Terauchi and Shin Tsunekawa and Shun Ito and Junyong Kang",

year = "2005",

doi = "10.1109/SIM.2005.1511407",

language = "English",

isbn = "078038668X",

series = "IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC",

pages = "156--159",

booktitle = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004",

note = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 ; Conference date: 20-09-2004 Through 25-09-2004",

}

Feng, X, Yuan, X, Sekiguchi, T, Terauchi, M, Tsunekawa, S, Ito, S & Kang, J 2005, Effects of metal buffer layer on the morphology of the ZnO columns. in 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004., 1511407, IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC, vol. 2005, pp. 156-159, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, China, 04/9/20. https://doi.org/10.1109/SIM.2005.1511407

Effects of metal buffer layer on the morphology of the ZnO columns. / Feng, Xia; Yuan, Xiaoli; Sekiguchi, Takashi et al.
2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004. 2005. p. 156-159 1511407 (IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Effects of metal buffer layer on the morphology of the ZnO columns

AU - Feng, Xia

AU - Yuan, Xiaoli

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AU - Ito, Shun

AU - Kang, Junyong

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N2 - ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.

AB - ZnO columns with different morphologies were grown on Au- and Cu-buffer layers deposited on Si substrates. This indicates that the metal buffer layer will affect the growth rates along different directions. The theoretical calculation shows that O atoms are favourably adsorbed on the hcp sites on both the Au (111) and the Cu (111) surfaces. However, the adsorbed Zn atoms are stabilized on the top site of the O atoms on the Au surface while they are favorable on the fee sites on the Cu surface. This suggests that the different morphologies initiate from the different adsorption sites of Zn atoms on the two metal surfaces.

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Effects of metal buffer layer on the morphology of the ZnO columns

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