Effects of mixing germane in silane gas-source molecular beam epitaxy

Ki Joon Kim; Maki Suemitsu; Masayoshi Yamanaka; Nobuo Miyamoto

doi:10.1063/1.109049

Effects of mixing germane in silane gas-source molecular beam epitaxy

Ki Joon Kim, Maki Suemitsu, Masayoshi Yamanaka, Nobuo Miyamoto

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.

Original language	English
Pages (from-to)	3461-3463
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	26
DOIs	https://doi.org/10.1063/1.109049
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.109049

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title = "Effects of mixing germane in silane gas-source molecular beam epitaxy",

abstract = "Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.",

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T1 - Effects of mixing germane in silane gas-source molecular beam epitaxy

AU - Kim, Ki Joon

AU - Suemitsu, Maki

AU - Yamanaka, Masayoshi

AU - Miyamoto, Nobuo

PY - 1993

Y1 - 1993

N2 - Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.

AB - Growth of SiGe gas-source molecular beam epitaxy (GSMBE) using silane/germane mixture has been investigated for the germane content of 0%, 0.8%, and 2.6%. From detailed measurements on the growth rate, a separation into high- and low-temperature regions of the growth rate, as in silane-GSMBE system, has been found to exist in this silane/germane system. A simultaneous measurement on the surface hydrogen coverage has revealed that the growth in the low-temperature region is rate limited by the surface hydrogen desorption process, reasoning the enhanced growth rate with germane in terms of the reduced coverage of the surface hydrogen. All the growth rates followed a same fourth power dependence on the free-adsorption site, which suggests a validity of the four-site adsorption model, established for silane-GSMBE, in silane/germane GSMBE.

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Effects of mixing germane in silane gas-source molecular beam epitaxy

Abstract

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