Abstract
The effects of nitrogen on GaAsP light-emitting diodes grown by hydride vapor phase epitaxy are described. Nitrogen acts as an isoelectronic trap and this localized state makes GaAsP a widely used material for from-yellow-to-red visible light-emitting diodes. The photoluminescence and electroluminescence spectra, brightness, and reliability were investigated systematically in line with the function of nitrogen concentration, from 0 (without nitrogen) to 2.3×10 19cm -3. When the nitrogen concentration reached 2.3×10 19cm -3, the total emission in the photoluminescence spectrum at 4.2 K showed a redshift. The study provides clarification of the effects of nitrogen on the diodes and demonstrates that the characteristics of the diodes strongly depend on the nitrogen concentration.
| Original language | English |
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| Pages (from-to) | 6266-6272 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 91 |
| Issue number | 10 I |
| DOIs | |
| Publication status | Published - 2002 May 15 |