TY - JOUR
T1 - Effects of O2 and N2 flow rate on the electrical properties of Fe-O-N thin films
AU - Ogawa, Yukiko
AU - Ando, Daisuke
AU - Sutou, Yuji
AU - Koike, Junichi
N1 - Publisher Copyright:
©2014 The Japan Institute of Metals and Materials
PY - 2014
Y1 - 2014
N2 - We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O2 and N2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O2 and N2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O2 and N2 gas flow rate. The resistivity increase with the O2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe3O4, to a mixed phase of FeO+α-Fe2O3, and to a single phase of α-Fe2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe3O4.
AB - We report the dependence of electrical properties of Fe-O-N thin films on the deposition condition as well as on O2 and N2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O2 and N2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing O2 and N2 gas flow rate. The resistivity increase with the O2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe3O4, to a mixed phase of FeO+α-Fe2O3, and to a single phase of α-Fe2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe3O4.
KW - Effects of oxygen and nitrogen flow rate
KW - Electrical resistivity
KW - Iron oxide
KW - Nitrogen-doped
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U2 - 10.2320/matertrans.M2014089
DO - 10.2320/matertrans.M2014089
M3 - Article
AN - SCOPUS:84907601387
SN - 1345-9678
VL - 55
SP - 1606
EP - 1610
JO - Materials Transactions
JF - Materials Transactions
IS - 10
ER -