Effects of plasma surface treatment on the self-forming barrier process in porous sioch

Seung Min Chung, Junichi Koike, Zsolt Tökei

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Self-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

Original languageEnglish
Title of host publicationMaterials and Processes for Advanced Interconnects for Microelectronics
Number of pages6
Publication statusPublished - 2008 Dec 1
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2008 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Effects of plasma surface treatment on the self-forming barrier process in porous sioch'. Together they form a unique fingerprint.

Cite this