Effects of process-induced mechanical stress on ESD performance

K. Kubota, K. Okuyama, H. Miura, Y. Kawashima, H. Ishizuka, C. Hashimoto

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


We studied the generation of dislocations during an ESD event by electrothermal and mechanical stress simulations based on analysis of critical mechanical stress for defect formation. We found the local thermal stress by ESD generates dislocations cooperatively with the residual mechanical stress in the Si substrate due to field oxidation. This means that process-induced mechanical stress is another key factor for controlling ESD performance, which will be important especially in low-power applications with severe leak requirements.

Original languageEnglish
Pages (from-to)87-88
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 1995 Jun 61995 Jun 8


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