TY - JOUR
T1 - Effects of pulse voltage on the formation of nanoporous Ti oxides by dealloying amorphous TiCu alloy
AU - Zhu, Shengli
AU - Pi, Lele
AU - Xie, Guoqiang
AU - Cui, Zhenduo
AU - Yang, Xianjin
AU - Inoue, Akihisa
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - In present study, we prepared nanoporous Ti oxides by potentiostat and pulse dealloying TiCu amorphous alloy in HNO3 solution. The influence of applied voltage on the morphology was investigated by SEM. The mechanism of dealloying was also discussed. A multilayer nanoporous structure was fabricated using pulse dealloying. The ideal nanoporous structure with mean pore diameter of about 50-100 nm and mean pore wall thickness of about 50 nm was obtained using pulse dealloying with initial voltage of 1.0 V and pulse size of 0.4 V. The static currents for pulse dealloying are higher than those for potentiostat dealloying under the same initial potentials. The nanoporous surface is mainly composed of TiO, Ti2O3 and TiO2.
AB - In present study, we prepared nanoporous Ti oxides by potentiostat and pulse dealloying TiCu amorphous alloy in HNO3 solution. The influence of applied voltage on the morphology was investigated by SEM. The mechanism of dealloying was also discussed. A multilayer nanoporous structure was fabricated using pulse dealloying. The ideal nanoporous structure with mean pore diameter of about 50-100 nm and mean pore wall thickness of about 50 nm was obtained using pulse dealloying with initial voltage of 1.0 V and pulse size of 0.4 V. The static currents for pulse dealloying are higher than those for potentiostat dealloying under the same initial potentials. The nanoporous surface is mainly composed of TiO, Ti2O3 and TiO2.
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U2 - 10.1088/1742-6596/417/1/012022
DO - 10.1088/1742-6596/417/1/012022
M3 - Conference article
AN - SCOPUS:84875902886
SN - 1742-6588
VL - 417
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
IS - 1
M1 - 012022
T2 - 15th International Conference on Thin Films, ICTF 2011
Y2 - 8 November 2011 through 11 November 2011
ER -