TY - JOUR
T1 - Effects of rotating magnetic fields on thermocapillary flow in a floating half-zone
AU - Yao, Liping
AU - Zeng, Zhong
AU - Li, Xiaohong
AU - Chen, Jingqiu
AU - Zhang, Yongxiang
AU - Mizuseki, Hiroshi
AU - Kawazoe, Yoshiyuki
N1 - Funding Information:
The authors are grateful to the staff of the Center for Computer Materials Science at the Institute for Materials Research, Tohoku University, for their continuous support of the SR8000-G1/64 supercomputing facilities. This work was supported by the National Natural Science Foundation of China (Grant nos. 10872222 and 50621403 ) and Fundamental Research Funds for the Central Universities (no. CDJXS10 24 11 03).
PY - 2011/2/1
Y1 - 2011/2/1
N2 - Three-dimensional numerical simulation of thermocapillary flow in a floating half-zone is performed. The effects of rotating magnetic fields (RMF) on thermocapillary flow of semiconductor melt (Pr=0.01) under microgravity are investigated. With increase in the Marangoni number (Ma) from 15 to 75, the melt flow loses stability changing from a steady axisymmetric flow to a three-dimensional steady flow, and then to a three-dimensional oscillatory flow. Due to the excellent electrical conductivity of the semiconductor melt, the induced Lorentz force under RMF with rotating frequency λ=50 Hz is effective in stirring the melt in the azimuthal direction and suppressing axial convection, which are both effective in returning the thermocapillary flow after the first and second instabilities to a steady axisymmetric flow.
AB - Three-dimensional numerical simulation of thermocapillary flow in a floating half-zone is performed. The effects of rotating magnetic fields (RMF) on thermocapillary flow of semiconductor melt (Pr=0.01) under microgravity are investigated. With increase in the Marangoni number (Ma) from 15 to 75, the melt flow loses stability changing from a steady axisymmetric flow to a three-dimensional steady flow, and then to a three-dimensional oscillatory flow. Due to the excellent electrical conductivity of the semiconductor melt, the induced Lorentz force under RMF with rotating frequency λ=50 Hz is effective in stirring the melt in the azimuthal direction and suppressing axial convection, which are both effective in returning the thermocapillary flow after the first and second instabilities to a steady axisymmetric flow.
KW - A1. Computer simulation
KW - A1. Rotating magnetic fields
KW - A1. Thermocapillary flow
KW - A2. Floating zone technique
KW - A2. Microgravity conditions
KW - B2. Semiconducting materials
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U2 - 10.1016/j.jcrysgro.2010.12.065
DO - 10.1016/j.jcrysgro.2010.12.065
M3 - Article
AN - SCOPUS:79551688126
SN - 0022-0248
VL - 316
SP - 177
EP - 184
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -