Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

S. Chichibu; D. A. Cohen; M. P. MacK; A. C. Abare; P. Kozodoy; M. Minsky; S. Fleischer; S. Keller; J. E. Bowers; U. K. Mishra; L. A. Coldren; D. R. Clarke; S. P. Denbaars

doi:10.1063/1.121912

Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

S. Chichibu, D. A. Cohen, M. P. MacK, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, S. P. Denbaars

IMRAM - Division of Measurements

University of California at Santa Barbara

Research output: Contribution to journal › Review article › peer-review

77 Citations (Scopus)

Abstract

Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.

Original language	English
Pages (from-to)	496-498
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	4
DOIs	https://doi.org/10.1063/1.121912
Publication status	Published - 1998

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10.1063/1.121912

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title = "Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes",

abstract = "Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.",

author = "S. Chichibu and Cohen, {D. A.} and MacK, {M. P.} and Abare, {A. C.} and P. Kozodoy and M. Minsky and S. Fleischer and S. Keller and Bowers, {J. E.} and Mishra, {U. K.} and Coldren, {L. A.} and Clarke, {D. R.} and Denbaars, {S. P.}",

year = "1998",

doi = "10.1063/1.121912",

language = "English",

volume = "73",

pages = "496--498",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

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TY - JOUR

T1 - Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

AU - Chichibu, S.

AU - Cohen, D. A.

AU - MacK, M. P.

AU - Abare, A. C.

AU - Kozodoy, P.

AU - Minsky, M.

AU - Fleischer, S.

AU - Keller, S.

AU - Bowers, J. E.

AU - Mishra, U. K.

AU - Coldren, L. A.

AU - Clarke, D. R.

AU - Denbaars, S. P.

PY - 1998

Y1 - 1998

N2 - Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.

AB - Optical gain spectra of InGaN multiquantum well laser diode wafers having Si-doped or undoped InGaN barriers were compared. Although evidence for effective band-gap inhomogeneity was found in both structures, the wells with the Si-doped barriers exhibited a smaller Stokes-like shift. Si doping suppressed emergence of a secondary amplified spontaneous emission peak at 3.05 eV, which was uncoupled with the primary one at 2.93 eV. Furthermore Si doping reduced the threshold power density required to obtain the stimulated emission.

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U2 - 10.1063/1.121912

DO - 10.1063/1.121912

M3 - Review article

AN - SCOPUS:0002746570

SN - 0003-6951

VL - 73

SP - 496

EP - 498

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes

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