Abstract
The spacer thickness effects of solar cells was investigated for external quantum efficiency (EQE) which was embedded with Ge islands into intrinsic region of Si-based p-i-n diode. The EQE response of solar cells depended on spacer thickness which separated layers of self-assembled Ge islands. When the spacer thickness sustained vertical ordering of islands, the EQE response was found to have optimum value. The random nucleation of islands exhibited an inferior EQE response due to thicker spacer layer.
Original language | English |
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Pages (from-to) | 2802-2804 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2004 Apr 12 |