Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer

Arnold Alguno, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima, Kentaro Sawano, Yasuhiro Shiraki

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The spacer thickness effects of solar cells was investigated for external quantum efficiency (EQE) which was embedded with Ge islands into intrinsic region of Si-based p-i-n diode. The EQE response of solar cells depended on spacer thickness which separated layers of self-assembled Ge islands. When the spacer thickness sustained vertical ordering of islands, the EQE response was found to have optimum value. The random nucleation of islands exhibited an inferior EQE response due to thicker spacer layer.

Original languageEnglish
Pages (from-to)2802-2804
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

Fingerprint

Dive into the research topics of 'Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer'. Together they form a unique fingerprint.

Cite this