Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces

Masaaki Higuchi; Takashi Aratani; Tatsufumi Hamada; Seiji Shinagawa; Hiroshi Nohira; Eiji Ikenaga; Akinobu Teramoto; Takeo Hattori; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1143/JJAP.46.1895

Electric characteristics of Si₃N₄ films formed by directly radical nitridation on Si(110) and Si(100) surfaces

Masaaki Higuchi, Takashi Aratani, Tatsufumi Hamada, Seiji Shinagawa, Hiroshi Nohira, Eiji Ikenaga, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

High quality Si₃N₄ film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si₃N₄ film is three orders of magnitude smaller than that through the conventional SiO₂ film, and the interface states density at midgap for Si₃N₄/Si interface is less than 5 × 10¹⁰ eV^-1 cm^-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si ₃N₄ films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si₃N₄/Si interface.

Original language	English
Pages (from-to)	1895-1898
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.1895
Publication status	Published - 2007 Apr 24

Keywords

Interface states density
Interface structure
Interfacial transition region
Leakage current density
SiN/Si
Silicon nitride

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10.1143/JJAP.46.1895

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title = "Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces",

abstract = "High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.",

keywords = "Interface states density, Interface structure, Interfacial transition region, Leakage current density, SiN/Si, Silicon nitride",

author = "Masaaki Higuchi and Takashi Aratani and Tatsufumi Hamada and Seiji Shinagawa and Hiroshi Nohira and Eiji Ikenaga and Akinobu Teramoto and Takeo Hattori and Shigetoshi Sugawa and Tadahiro Ohmi",

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T1 - Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces

AU - Higuchi, Masaaki

AU - Aratani, Takashi

AU - Hamada, Tatsufumi

AU - Shinagawa, Seiji

AU - Nohira, Hiroshi

AU - Ikenaga, Eiji

AU - Teramoto, Akinobu

AU - Hattori, Takeo

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2007/4/24

Y1 - 2007/4/24

N2 - High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.

AB - High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5 × 1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si 3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface.

KW - Interface states density

KW - Interface structure

KW - Interfacial transition region

KW - Leakage current density

KW - SiN/Si

KW - Silicon nitride

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

Electric characteristics of Si₃N₄ films formed by directly radical nitridation on Si(110) and Si(100) surfaces

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Keywords

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