Abstract
Electric double layer field-effect transistors (EDL-FETs) of rubrene single crystals using a liquid polymer electrolyte were studied in a four-probe configuration. The channel sheet resistance and the contact resistance normalized by the contact width were 0.24 MΩ and 0.83 kΩcm in the ON-state, respectively. These values are smaller than those of previously reported conventional rubrene crystal FETs, corroborating the high carrier density accumulation in the EDL-FET. In addition, peculiar peak behaviour in the transfer characteristics did not appear in the gate voltage dependence of four-probe conductivity. This observation leads us to conclude that the peak is ascribed to the increase of the contact resistance in the high gate voltage region.
Original language | English |
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Pages (from-to) | 3613-3617 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics |
Volume | 46 |
Issue number | 6 A |
DOIs | |
Publication status | Published - 2007 Jun 6 |
Keywords
- Electric double layer
- FET
- Organic transistor
- Rubrene
- Transistor