Electric double layer transistor with a (Ga,Mn)As channel

M. Endo; D. Chiba; H. Shimotani; F. Matsukura; Y. Iwasa; H. Ohno

doi:10.1063/1.3277146

Electric double layer transistor with a (Ga,Mn)As channel

M. Endo, D. Chiba, H. Shimotani, F. Matsukura, Y. Iwasa, H. Ohno

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator- semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.

Original language	English
Article number	022515
Journal	Applied Physics Letters
Volume	96
Issue number	2
DOIs	https://doi.org/10.1063/1.3277146
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3277146

Cite this

@article{463cf9bee1c14c9cada09c03f8c5aed5,

title = "Electric double layer transistor with a (Ga,Mn)As channel",

abstract = "The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator- semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.",

author = "M. Endo and D. Chiba and H. Shimotani and F. Matsukura and Y. Iwasa and H. Ohno",

note = "Funding Information: This work was supported in part by Grant-in-Aids from MEXT/JSPS, the GCOE Program at Tohoku University.",

year = "2010",

doi = "10.1063/1.3277146",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Electric double layer transistor with a (Ga,Mn)As channel

AU - Endo, M.

AU - Chiba, D.

AU - Shimotani, H.

AU - Matsukura, F.

AU - Iwasa, Y.

AU - Ohno, H.

N1 - Funding Information: This work was supported in part by Grant-in-Aids from MEXT/JSPS, the GCOE Program at Tohoku University.

PY - 2010

Y1 - 2010

N2 - The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator- semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.

AB - The authors have fabricated electric double layer transistors with a (Ga,Mn)As channel to investigate the possibility of larger modulation of magnetism by the application of electric fields. The sheet conductance as well as the Curie temperature can be modulated up to a few tens of percents by application of gate voltage of a few volts, which is almost one-order of magnitude smaller than that required in conventional metal-insulator- semiconductor structures. The 14 K modulation of the Curie temperature by applying gate voltage ranging from -1 to 3 V is the highest modulation ratio reported so far in ferromagnetic semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=74549130987&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74549130987&partnerID=8YFLogxK

U2 - 10.1063/1.3277146

DO - 10.1063/1.3277146

M3 - Article

AN - SCOPUS:74549130987

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022515

ER -

Electric double layer transistor with a (Ga,Mn)As channel

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this