Electric feed-through for vacuum package using double-side anodic bonding of silicon-on-insulator wafer

Hoang Manh Chu, Hung Ngoc Vu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


It is not easy to hermetically seal using anodic bonding on both sides of silicon-on-insulator (SOI) wafer. Taking this into consideration, we suggest an electrical feed-through method for anodic bonding on the both sides of SOI wafer. The suggested method is illustrated on the basis of vacuum package of a conventional two-dimensional (2-D) micro-scanner. Electric feed-through for anodic bonding and electrical interconnection through the glass/silicon interface to the 2-D micro-scanner in the package are presented. The proposed electrical feed-through method is investigated by characterizing bonding current. The bonding current characteristics show that the electric feed-through has formed electric field distribution required for double-side anodic bonding. The operation characteristics of packaged 2-D micro-scanner are also investigated, which show successfully performed electric interconnection between inside and outside of the package. The proposed method is an effective technique for double-side anodic bonding based package not only for micro-scanner but also for different mechanical oscillators such as accelerometer, gyroscope and etc.

Original languageEnglish
Pages (from-to)130-133
Number of pages4
JournalJournal of Electrostatics
Issue number2
Publication statusPublished - 2013 Apr


  • Double-side anodic bonding
  • Electric feed-through
  • Silicon-on-insulator
  • Vacuum package

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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