Electric-field control of ferromagnetism in (Ga,Mn)As

Daichi Chiba; F. Matsukura; H. Ohno

doi:10.1063/1.2362971

Electric-field control of ferromagnetism in (Ga,Mn)As

Daichi Chiba, F. Matsukura, H. Ohno

Japan Science and Technology Agency

Research output: Contribution to journal › Article › peer-review

149 Citations (Scopus)

Abstract

The authors show modulation of Curie temperature TC and coercivity μ0 Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2 O3 gate insulator is utilized. Application of E=+5 (-5) MVcm decreases (increases) TC of the channel layer. μ0 Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0 Hc by E is discussed.

Original language	English
Article number	162505
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2362971
Publication status	Published - 2006

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title = "Electric-field control of ferromagnetism in (Ga,Mn)As",

abstract = "The authors show modulation of Curie temperature TC and coercivity μ0 Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2 O3 gate insulator is utilized. Application of E=+5 (-5) MVcm decreases (increases) TC of the channel layer. μ0 Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0 Hc by E is discussed.",

author = "Daichi Chiba and F. Matsukura and H. Ohno",

note = "Funding Information: The authors thank Y. Nishitani, M. Yamanouchi, and T. Dietl, for useful discussion. This work was in part supported by the IT Program of RR2002 from MEXT.",

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AU - Chiba, Daichi

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank Y. Nishitani, M. Yamanouchi, and T. Dietl, for useful discussion. This work was in part supported by the IT Program of RR2002 from MEXT.

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Y1 - 2006

N2 - The authors show modulation of Curie temperature TC and coercivity μ0 Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2 O3 gate insulator is utilized. Application of E=+5 (-5) MVcm decreases (increases) TC of the channel layer. μ0 Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0 Hc by E is discussed.

AB - The authors show modulation of Curie temperature TC and coercivity μ0 Hc by applying external electric fields E in a ferromagnetic semiconductor (Ga,Mn)As, where a field-effect transistor structure with an Al2 O3 gate insulator is utilized. Application of E=+5 (-5) MVcm decreases (increases) TC of the channel layer. μ0 Hc also decreases (increases) with increasing (decreasing) E below TC. The mechanism of the modulation of μ0 Hc by E is discussed.

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Electric-field control of ferromagnetism in (Ga,Mn)As

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