TY - JOUR
T1 - Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells
AU - Mathur, A.
AU - Ohno, Y.
AU - Matsukura, F.
AU - Ohtani, K.
AU - Akiba, N.
AU - Kuroiwa, T.
AU - Nakajima, H.
AU - Ohno, H.
N1 - Funding Information:
The authors would like to thank Professor M. Niwano for valuable discussions on the FTIR measurements. They also gratefully acknowledge the Mazda Foundation, and Grant-in-Aid from the Ministry of Education, Science, Sports and Culture, Japan for partial support of this work.
PY - 1997/4
Y1 - 1997/4
N2 - The effects of applied electric fields on intersubband (ISB) transitions in modulation-doped n-i-n and p-i-n type GaAs/AlGaAs single quantum well (SQW) structures are studied experimentally using Fourier Transform InfraRed (FTIR) spectroscopy. The n-i-n SQW devices exhibit a red shift of 0.7 meV in the ISB transition energy and a 12% decrease in the integrated absorbance at the maximum applied bias of 3.2 V with reference to their zero bias values, most of which is attributed to a rise in the device temperature due to Joule heating owing to the current flowing through the device. The p-i-n SQW devices exhibit strong quenching of the absorption when a negative bias is applied, while there was no observable shift in the ISB transition energy.
AB - The effects of applied electric fields on intersubband (ISB) transitions in modulation-doped n-i-n and p-i-n type GaAs/AlGaAs single quantum well (SQW) structures are studied experimentally using Fourier Transform InfraRed (FTIR) spectroscopy. The n-i-n SQW devices exhibit a red shift of 0.7 meV in the ISB transition energy and a 12% decrease in the integrated absorbance at the maximum applied bias of 3.2 V with reference to their zero bias values, most of which is attributed to a rise in the device temperature due to Joule heating owing to the current flowing through the device. The p-i-n SQW devices exhibit strong quenching of the absorption when a negative bias is applied, while there was no observable shift in the ISB transition energy.
KW - FTIR spectroscopy
KW - Intersubband transitions
KW - Molecular beam epitaxy
KW - Quantum wells
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U2 - 10.1016/S0169-4332(96)00879-3
DO - 10.1016/S0169-4332(96)00879-3
M3 - Article
AN - SCOPUS:0031547425
SN - 0169-4332
VL - 113-114
SP - 90
EP - 96
JO - Applied Surface Science
JF - Applied Surface Science
ER -