Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

D. Chiba; M. Yamanouchi; F. Matsukura; E. Abe; Y. Ohno; K. Ohtani; H. Ohno

Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno

Leadership

Tohoku University

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature T_C but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.

Original language	English
Pages (from-to)	179-182
Number of pages	4
Journal	Journal of Superconductivity and Novel Magnetism
Volume	16
Issue number	1
Publication status	Published - 2003

Keywords

(Ga,Mn)As
(In,Mn)As
Carrier-induced ferromagnetism
Field-effect transistors

Cite this

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title = "Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As",

abstract = "We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature TC but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.",

keywords = "(Ga,Mn)As, (In,Mn)As, Carrier-induced ferromagnetism, Field-effect transistors",

author = "D. Chiba and M. Yamanouchi and F. Matsukura and E. Abe and Y. Ohno and K. Ohtani and H. Ohno",

note = "Funding Information: We thank T. Omiya and T. Dietl for their help and fruitful discussions. This work was partly supported by Grant-in-Aids from JSPS (No. 12305001, 14076203, 14205002), by IT PROGRAM of Research Revolution 2002 (RR2002), from MEXT by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists, and by Sasakawa Scientific Research Grant from the Japan Scientific Society.",

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language = "English",

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pages = "179--182",

journal = "Journal of Superconductivity and Novel Magnetism",

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TY - JOUR

T1 - Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

AU - Chiba, D.

AU - Yamanouchi, M.

AU - Matsukura, F.

AU - Abe, E.

AU - Ohno, Y.

AU - Ohtani, K.

AU - Ohno, H.

N1 - Funding Information: We thank T. Omiya and T. Dietl for their help and fruitful discussions. This work was partly supported by Grant-in-Aids from JSPS (No. 12305001, 14076203, 14205002), by IT PROGRAM of Research Revolution 2002 (RR2002), from MEXT by Research Fellowships of the Japan Society for the Promotion of Science for Young Scientists, and by Sasakawa Scientific Research Grant from the Japan Scientific Society.

PY - 2003

Y1 - 2003

N2 - We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature TC but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.

AB - We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature TC but also the magnetization and the coercive force of (In,Mn)As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn)As channel. Results on a (Al,Ga,Mn)As channel FET are also presented.

KW - (Ga,Mn)As

KW - (In,Mn)As

KW - Carrier-induced ferromagnetism

KW - Field-effect transistors

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AN - SCOPUS:0347432174

SN - 1557-1939

VL - 16

SP - 179

EP - 182

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 1

ER -

Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In,Mn)As and ((Al),Ga,Mn)As

Abstract

Keywords

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