Electric-field-enhanced growth of carbon nanotubes for scanning probe microscopy

Takahito Ono, Hidetoshi Miyashita, Masayoshi Esashi

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


The influence of an electric field on carbon nanotube (CNT) growth using hot-filament chemical vapour deposition is investigated. Acetylene (C2H2) gas diluted with hydrogen is used as the source gas for the growth of CNTs, and a bias voltage of -300 V is applied to the sample stage during growth. The silicon substrate onto which the CNT is grown is prepared by sputtering a thin catalysed metal (Ni) film onto the surface, and the CNT is selectively grown from the tip of a silicon protrusion on the substrate. It is found that the application of a high electrostatic field with a negative substrate bias enhances the growth of CNTs in this situation. This effect is successfully applied to the fabrication of a CNT tip supported by a silicon cantilever for use in scanning probe microscopy.

Original languageEnglish
Pages (from-to)62-64
Number of pages3
Issue number1
Publication statusPublished - 2002 Feb


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