TY - JOUR
T1 - Electric-Field-Induced Ferroelectricity in 5%Y-doped Hf0.5Zr0.5O2
T2 - Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase
AU - Shimizu, Takao
AU - Tashiro, Yuki
AU - Mimura, Takanori
AU - Kiguchi, Takanori
AU - Shiraishi, Takahisa
AU - Konnno, Toyohiko J.
AU - Sakata, Osami
AU - Funakubo, Hiroshi
N1 - Funding Information:
This work was partly supported by the Japan Society for the Promotion of Science (JSPS) KAKENHI grant nos. 17J10208, 17K14807, 18H01701, and 18K19016 and by the project “Element Strategy Initiative to Form a Core Research Center (JPMXP0112101001)” of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. The synchrotron radiation experiments were carried out at the BL15XU with the approval of NIMS (proposal no. 2019A4700) and supported by Yoshio Katsuya, Research Network, and Facility Services Division (RNFS) at Spring‐8, NIMS.
Funding Information:
This work was partly supported by the Japan Society for the Promotion of Science (JSPS) KAKENHI grant nos. 17J10208, 17K14807, 18H01701, and 18K19016 and by the project “Element Strategy Initiative to Form a Core Research Center (JPMXP0112101001)” of the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. The synchrotron radiation experiments were carried out at the BL15XU with the approval of NIMS (proposal no. 2019A4700) and supported by Yoshio Katsuya, Research Network, and Facility Services Division (RNFS) at Spring-8, NIMS.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/5
Y1 - 2021/5
N2 - The ferroelectric phase transformation from the tetragonal phase to the orthorhombic phase, induced by an electric field, is demonstrated in a 5%YO1.5-doped Hf0.5Zr0.5O2 epitaxial film which is grown on Sn-doped In2O3-covered (111) yttria-stabilized zirconia by the pulsed laser deposition method at room temperature and subsequent heat treatment. Although X-ray diffraction shows the film to consist of a paraelectric tetragonal phase after the heat treatment, polarization–electric field (P–E) measurements reveal a hysteresis loop attributed to the ferroelectricity. To clarify the discrepancy between the crystal structure and electric characteristics, the crystal structure after electric field loading is determined by scanning transmission electron microscopy and synchrotron X-ray diffraction measurements. Both structural characterizations clearly reveal that the application of an electric field promotes the phase transition from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase. This ferroelectric transition is irreversible, as the ferroelectric phase remains after the removal of the electric field. These results facilitate the elucidation of the mechanism by which ferroelectricity is displayed in HfO2-based fluorite ferroelectric materials and imply unimportance of the orthorhombic phase for as-prepared films.
AB - The ferroelectric phase transformation from the tetragonal phase to the orthorhombic phase, induced by an electric field, is demonstrated in a 5%YO1.5-doped Hf0.5Zr0.5O2 epitaxial film which is grown on Sn-doped In2O3-covered (111) yttria-stabilized zirconia by the pulsed laser deposition method at room temperature and subsequent heat treatment. Although X-ray diffraction shows the film to consist of a paraelectric tetragonal phase after the heat treatment, polarization–electric field (P–E) measurements reveal a hysteresis loop attributed to the ferroelectricity. To clarify the discrepancy between the crystal structure and electric characteristics, the crystal structure after electric field loading is determined by scanning transmission electron microscopy and synchrotron X-ray diffraction measurements. Both structural characterizations clearly reveal that the application of an electric field promotes the phase transition from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase. This ferroelectric transition is irreversible, as the ferroelectric phase remains after the removal of the electric field. These results facilitate the elucidation of the mechanism by which ferroelectricity is displayed in HfO2-based fluorite ferroelectric materials and imply unimportance of the orthorhombic phase for as-prepared films.
KW - ferroelectric thin films
KW - field-induced phase transitions
KW - fluorite oxide materials
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U2 - 10.1002/pssr.202000589
DO - 10.1002/pssr.202000589
M3 - Article
AN - SCOPUS:85101983715
SN - 1862-6254
VL - 15
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 5
M1 - 2000589
ER -