Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

S. Kanai; M. Yamanouchi; S. Ikeda; Y. Nakatani; F. Matsukura; H. Ohno

doi:10.1063/1.4753816

Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

S. Kanai, M. Yamanouchi, S. Ikeda, Y. Nakatani, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

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Abstract

The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

Original language	English
Article number	122403
Journal	Applied Physics Letters
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.4753816
Publication status	Published - 2012 Sept 17

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title = "Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction",

abstract = "The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.",

author = "S. Kanai and M. Yamanouchi and S. Ikeda and Y. Nakatani and F. Matsukura and H. Ohno",

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T1 - Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

AU - Kanai, S.

AU - Yamanouchi, M.

AU - Ikeda, S.

AU - Nakatani, Y.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: The authors thank M. Endo, H. Sato, I. Morita, T. Hirata, and H. Iwanuma for their technical supports and discussion. This work was supported in part by JSPS through FIRST program.

PY - 2012/9/17

Y1 - 2012/9/17

N2 - The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

AB - The electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.

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Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction

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