Abstract
The electric-field effect on magnetic anisotropy provides a low-energy scheme for magnetization switching in magnetic tunnel junctions. We review our recent works on the electric-field-induced magnetization switching in CoFeB/MgO-based magnetic tunnel junctions. We show that the switching with a higher speed and a lower energy than the spin-transfer switching can be realized using the electric-field effect. The increase of the electric-field modulation ratio is expected to result in a marked reduction of the switching energy as well as in the improvement of the switching reliability for magnetic tunnel junctions with a high thermal stability factor. Further study is necessary to improve the modulation ratio.
| Original language | English |
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| Article number | 0802A3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 56 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2017 Aug |