Abstract
We have investigated the electric field effect on magneto-thermoelectric conversion in ultrathin Co films with a naturally-oxidized surface and a solid-state capacitor structure. By means of the thermoelectric imaging technique based on the lock-in thermography, we demonstrate the reversible on-off switching of heat currents generated by the anomalous Ettingshausen effect in response to the electric-field-induced magnetic phase transition in the Co films. The electric-field-induced switching property is found to be tuned by changing the Co thickness. Our finding will provide a method for reconfigurable and pin-point switching of thermoelectric conversion properties in spin-caloritronic devices.
Original language | English |
---|---|
Article number | 123003 |
Journal | Applied Physics Express |
Volume | 12 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2019 Dec 1 |
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In: Applied Physics Express, Vol. 12, No. 12, 123003, 01.12.2019.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Electric-field-induced on-off switching of anomalous Ettingshausen effect in ultrathin Co films
AU - Nakayama, Hiroyasu
AU - Hirai, Takamasa
AU - Uzuhashi, Jun
AU - Iguchi, Ryo
AU - Ohkubo, Tadakatsu
AU - Koyama, Tomohiro
AU - Chiba, Daichi
AU - Uchida, Ken Ichi
N1 - Funding Information: Hiroyasu Nakayama Takamasa Hirai Jun Uzuhashi Ryo Iguchi Tadakatsu Ohkubo Tomohiro Koyama Daichi Chiba Ken-ichi Uchida Hiroyasu Nakayama Takamasa Hirai Jun Uzuhashi Ryo Iguchi Tadakatsu Ohkubo Tomohiro Koyama Daichi Chiba Ken-ichi Uchida National Institute for Materials Science, Tsukuba 305-0047, Japan Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan The Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, Japan Center for Spintronics Research Network, Osaka University, Osaka 560-6671, Japan Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan These authors contributed equally to this work. Hiroyasu Nakayama, Takamasa Hirai, Jun Uzuhashi, Ryo Iguchi, Tadakatsu Ohkubo, Tomohiro Koyama, Daichi Chiba and Ken-ichi Uchida 2019-12-01 2019-11-20 14:10:14 cgi/release: Article released bin/incoming: New from .zip Core Research for Evolutional Science and Technology https://doi.org/10.13039/501100003382 JPMJCR17I1 Japan Society for the Promotion of Science https://doi.org/10.13039/501100001691 JP17H04808 JP18H05246 JP18J10734 JP18K14116 JP18K18849 JP19H00860 JP19H02585 yes We have investigated the electric field effect on magneto-thermoelectric conversion in ultrathin Co films with a naturally-oxidized surface and a solid-state capacitor structure. By means of the thermoelectric imaging technique based on the lock-in thermography, we demonstrate the reversible on–off switching of heat currents generated by the anomalous Ettingshausen effect in response to the electric-field-induced magnetic phase transition in the Co films. The electric-field-induced switching property is found to be tuned by changing the Co thickness. Our finding will provide a method for reconfigurable and pin-point switching of thermoelectric conversion properties in spin-caloritronic devices. � 2019 The Japan Society of Applied Physics [1] Bauer G. E. W., Saitoh E. and van Wees B. J. 2012 Nat. Mater. 11 391 10.1038/nmat3301 Bauer G. E. W., Saitoh E. and van Wees B. J. Nat. Mater. 11 2012 391 [2] Uchida K., Takahashi S., Harii K., Ieda J., Koshibae W., Ando K., Maekawa S. and Saitoh E. 2008 Nature 455 778 10.1038/nature07321 Uchida K., Takahashi S., Harii K., Ieda J., Koshibae W., Ando K., Maekawa S. and Saitoh E. Nature 455 2008 778 [3] Jaworski C. M., Yang J., Mack S., Awschalom D. D., Heremans J. P. and Myers R. C. 2010 Nat. Mater. 9 898 10.1038/nmat2860 Jaworski C. M., Yang J., Mack S., Awschalom D. D., Heremans J. P. and Myers R. C. Nat. Mater. 9 2010 898 [4] Uchida K., Adachi H., Ota T., Nakayama H., Maekawa S. and Saitoh E. 2010 Appl. Phys. Lett. 97 172505 10.1063/1.3507386 Uchida K., Adachi H., Ota T., Nakayama H., Maekawa S. and Saitoh E. Appl. Phys. Lett. 97 172505 2010 [5] Flipse J., Dejene F. K., Wagenaar D., Bauer G. E. W., Ben Youssef J. and van Wees B. J. 2014 Phys. Rev. Lett. 113 027601 10.1103/PhysRevLett.113.027601 Flipse J., Dejene F. K., Wagenaar D., Bauer G. E. W., Ben Youssef J. and van Wees B. J. Phys. Rev. Lett. 113 027601 2014 [6] Daimon S., Iguchi R., Hioki T., Saitoh E. and Uchida K. 2016 Nat. Commun. 7 13754 10.1038/ncomms13754 Daimon S., Iguchi R., Hioki T., Saitoh E. and Uchida K. Nat. Commun. 7 2016 13754 [7] Iguchi R., Yagmur A., Lau Y.-C., Daimon S., Saitoh E., Hayashi M. and Uchida K. 2018 Phys. Rev. B 98 014402 10.1103/PhysRevB.98.014402 Iguchi R., Yagmur A., Lau Y.-C., Daimon S., Saitoh E., Hayashi M. and Uchida K. Phys. Rev. B 98 014402 2018 [8] Jan J. P. 1957 Solid State Phys. ed F. Seitz and D. Turnbull (New York: Academic) p. 1 Jan J. P. ed Seitz F. and Turnbull D. Solid State Phys. 1957 1 [9] Gravier L., Serrano-Guisan S., Reuse F. and Ansermet J.-P. 2006 Phys. Rev. B 73 052410 10.1103/PhysRevB.73.052410 Gravier L., Serrano-Guisan S., Reuse F. and Ansermet J.-P. Phys. Rev. B 73 052410 2006 [10] Wegrowe J.-E., Nguyen Q. A., Al-Barki M., Dayen J.-F., Wade T. L. and Drouhin H.-J. 2006 Phys. Rev. B 73 134422 10.1103/PhysRevB.73.134422 Wegrowe J.-E., Nguyen Q. A., Al-Barki M., Dayen J.-F., Wade T. L. and Drouhin H.-J. Phys. Rev. B 73 134422 2006 [11] Slachter A., Bakker F. L., Adam J.-P. and van Wees B. J. 2010 Nat. Phys. 6 879 10.1038/nphys1767 Slachter A., Bakker F. L., Adam J.-P. and van Wees B. J. Nat. Phys. 6 2010 879 [12] Walter M. et al 2011 Nat. Mater. 10 742 10.1038/nmat3076 Walter M. et al Nat. Mater. 10 2011 742 [13] Flipse J., Bakker F. L., Slachter A., Dejene F. K. and van Wees B. J. 2012 Nat. Nanotechnol. 7 166 10.1038/nnano.2012.2 Flipse J., Bakker F. L., Slachter A., Dejene F. K. and van Wees B. J. Nat. Nanotechnol. 7 2012 166 [14] Boehnke A. et al 2017 Nat. Commun. 8 1626 10.1038/s41467-017-01784-x Boehnke A. et al Nat. Commun. 8 2017 1626 [15] Meyer S. et al 2017 Nat. Mater. 16 977 10.1038/nmat4964 Meyer S. et al Nat. Mater. 16 2017 977 [16] Sheng P., Sakuraba Y., Lau Y.-C., Takahashi S., Mitani S. and Hayashi M. 2017 Sci. Adv. 3 e1701503 10.1126/sciadv.1701503 Sheng P., Sakuraba Y., Lau Y.-C., Takahashi S., Mitani S. and Hayashi M. Sci. Adv. 3 e1701503 2017 [17] Das K. S., Dejene F. K., van Wees B. J. and Vera-Marun I. J. 2016 Phys. Rev. B 94 180403(R) 10.1103/PhysRevB.94.180403 Das K. S., Dejene F. K., van Wees B. J. and Vera-Marun I. J. Phys. Rev. B 94 180403(R) 2016 [18] Uchida K., Daimon S., Iguchi R. and Saitoh E. 2018 Nature 558 95 10.1038/s41586-018-0143-x Uchida K., Daimon S., Iguchi R. and Saitoh E. Nature 558 2018 95 [19] Masuda K., Uchida K., Iguchi R. and Miura Y. 2019 Phys. Rev. B 99 104406 10.1103/PhysRevB.99.104406 Masuda K., Uchida K., Iguchi R. and Miura Y. Phys. Rev. B 99 104406 2019 [20] Das R., Iguchi R. and Uchida K. 2019 Phys. Rev. Appl. 11 034022 10.1103/PhysRevApplied.11.034022 Das R., Iguchi R. and Uchida K. Phys. Rev. Appl. 11 034022 2019 [21] Nakayama H., Nakatani T., Iguchi R., Seki T. and Uchida K. 2019 Appl. Phys. Lett. 115 092406 10.1063/1.5120569 Nakayama H., Nakatani T., Iguchi R., Seki T. and Uchida K. Appl. Phys. Lett. 115 092406 2019 [22] Suryanarayanan R., Gasumyants V. and Ageev N. 1999 Phys. Rev. B 59 R9019(R) 10.1103/PhysRevB.59.R9019 Suryanarayanan R., Gasumyants V. and Ageev N. Phys. Rev. B 59 R9019(R) 1999 [23] Lee W.-L., Watauchi S., Miller V. L., Cava R. J. and Ong N. P. 2004 Phys. Rev. Lett. 93 226601 10.1103/PhysRevLett.93.226601 Lee W.-L., Watauchi S., Miller V. L., Cava R. J. and Ong N. P. Phys. Rev. Lett. 93 226601 2004 [24] Miyasato T., Abe N., Fujii T., Asamitsu A., Onoda S., Onose Y., Nagaosa N. and Tokura Y. 2007 Phys. Rev. Lett. 99 086602 10.1103/PhysRevLett.99.086602 Miyasato T., Abe N., Fujii T., Asamitsu A., Onoda S., Onose Y., Nagaosa N. and Tokura Y. Phys. Rev. Lett. 99 086602 2007 [25] Pu Y., Chiba D., Matsukura F., Ohno H. and Shi J. 2008 Phys. Rev. Lett. 101 117208 10.1103/PhysRevLett.101.117208 Pu Y., Chiba D., Matsukura F., Ohno H. and Shi J. Phys. Rev. Lett. 101 117208 2008 [26] Mizuguchi M., Ohata S., Uchida K., Saitoh E. and Takanashi K. 2012 Appl. Phys. Express 5 093002 10.1143/APEX.5.093002 Mizuguchi M., Ohata S., Uchida K., Saitoh E. and Takanashi K. Appl. Phys. Express 1882-0786 5 9 093002 2012 [27] Sakuraba Y., Hasegawa K., Mizuguchi M., Kubota T., Mizukami S., Miyazaki T. and Takanashi K. 2013 Appl. Phys. Express 6 033003 10.7567/APEX.6.033003 Sakuraba Y., Hasegawa K., Mizuguchi M., Kubota T., Mizukami S., Miyazaki T. and Takanashi K. Appl. Phys. Express 1882-0786 6 3 033003 2013 [28] Yang Z., Codecido E. A., Marquez J., Zheng Y., Heremans J. P. and Myers R. C. 2017 AIP Adv. 7 095017 10.1063/1.5003611 Yang Z., Codecido E. A., Marquez J., Zheng Y., Heremans J. P. and Myers R. C. AIP Adv. 7 095017 2017 [29] Sakai A. et al 2018 Nat. Phys. 14 1119 10.1038/s41567-018-0225-6 Sakai A. et al Nat. Phys. 14 2018 1119 [30] Bridgman P. W. 1924 Phys. Rev. 24 644 10.1103/PhysRev.24.644 Bridgman P. W. Phys. Rev. 24 1924 644 [31] Hall E. H. 1925 Phys. Rev. 26 820 10.1103/PhysRev.26.820 Hall E. H. Phys. Rev. 26 1925 820 [32] Butler E. H. Jr and Pugh E. M. 1940 Phys. Rev. 57 916 10.1103/PhysRev.57.916 Butler E. H.Jr and Pugh E. M. Phys. Rev. 57 1940 916 [33] Seki T., Iguchi R., Takanashi K. and Uchida K. 2018 Appl. Phys. Lett. 112 152403 10.1063/1.5022759 Seki T., Iguchi R., Takanashi K. and Uchida K. Appl. Phys. Lett. 112 152403 2018 [34] Seki T., Iguchi R., Takanashi K. and Uchida K. 2018 J. Phys. D 51 254001 10.1088/1361-6463/aac481 Seki T., Iguchi R., Takanashi K. and Uchida K. J. Phys. D 0022-3727 51 25 254001 2018 [35] Ota S., Uchida K., Iguchi R., Thach P. V., Awano H. and Chiba D. 2019 Sci. Rep. 9 13197 10.1038/s41598-019-49567-2 Ota S., Uchida K., Iguchi R., Thach P. V., Awano H. and Chiba D. Sci. Rep. 9 2019 13197 [36] Seki T., Miura A., Uchida K., Kubota T. and Takanashi K. 2019 Appl. Phys. Express 12 023006 10.7567/1882-0786/aafb5a Seki T., Miura A., Uchida K., Kubota T. and Takanashi K. Appl. Phys. Express 1882-0786 12 2 023006 2019 [37] Chiba D., Fukami S., Shimamura K., Ishiwata N., Kobayashi K. and Ono T. 2011 Nat. Mater. 10 853 10.1038/nmat3130 Chiba D., Fukami S., Shimamura K., Ishiwata N., Kobayashi K. and Ono T. Nat. Mater. 10 2011 853 [38] Shimamura K., Chiba D., Ono S., Fukami S., Ishiwata N., Kawaguchi M., Kobayashi K. and Ono T. 2012 Appl. Phys. Lett. 100 122402 10.1063/1.3695160 Shimamura K., Chiba D., Ono S., Fukami S., Ishiwata N., Kawaguchi M., Kobayashi K. and Ono T. Appl. Phys. Lett. 100 122402 2012 [39] Hirai T., Koyama T. and Chiba D. 2018 Appl. Phys. Lett. 112 122408 10.1063/1.5020932 Hirai T., Koyama T. and Chiba D. Appl. Phys. Lett. 112 122408 2018 [40] Bi C., Liu Y., Newhouse-Illige T., Xu M., Rosales M., Freeland J. W., Mryasov O., Zhang S., te Velthuis S. G. E. and Wang W. G. 2014 Phys. Rev. Lett. 113 267202 10.1103/PhysRevLett.113.267202 Bi C., Liu Y., Newhouse-Illige T., Xu M., Rosales M., Freeland J. W., Mryasov O., Zhang S., te Velthuis S. G. E. and Wang W. G. Phys. Rev. Lett. 113 267202 2014 [41] Bauer U., Yao L., Tan A. J., Agrawal P., Emori S., Tuller H. L., van Dijken S. and Beach G. S. D. 2015 Nat. Mater. 14 174 10.1038/nmat4134 Bauer U., Yao L., Tan A. J., Agrawal P., Emori S., Tuller H. L., van Dijken S. and Beach G. S. D. Nat. Mater. 14 2015 174 [42] Straube H., Wagner J.-M. and Breitenstein O. 2009 Appl. Phys. Lett. 95 052107 10.1063/1.3194156 Straube H., Wagner J.-M. and Breitenstein O. Appl. Phys. Lett. 95 052107 2009 [43] Breitenstein O., Warta W. and Langenkamp M. 2010 Lock-in Thermography: Basics and Use for Evaluating Electronic Devices and Materials (Berlin: Springer) 10.1007/978-3-642-02417-7 Breitenstein O., Warta W. and Langenkamp M. Lock-in Thermography: Basics and Use for Evaluating Electronic Devices and Materials 1437-0387 10 2010 [44] Wid O., Bauer J., Müller A., Breitenstein O., Parkin S. S. P. and Schmidt G. 2016 Sci. Rep. 6 28233 10.1038/srep28233 Wid O., Bauer J., Müller A., Breitenstein O., Parkin S. S. P. and Schmidt G. Sci. Rep. 6 2016 28233 [45] Matsukura F., Tokura Y. and Ohno H. 2015 Nat. Nanotechnol. 10 209 10.1038/nnano.2015.22 Matsukura F., Tokura Y. and Ohno H. Nat. Nanotechnol. 10 2015 209 Publisher Copyright: © 2019 The Japan Society of Applied Physics.
PY - 2019/12/1
Y1 - 2019/12/1
N2 - We have investigated the electric field effect on magneto-thermoelectric conversion in ultrathin Co films with a naturally-oxidized surface and a solid-state capacitor structure. By means of the thermoelectric imaging technique based on the lock-in thermography, we demonstrate the reversible on-off switching of heat currents generated by the anomalous Ettingshausen effect in response to the electric-field-induced magnetic phase transition in the Co films. The electric-field-induced switching property is found to be tuned by changing the Co thickness. Our finding will provide a method for reconfigurable and pin-point switching of thermoelectric conversion properties in spin-caloritronic devices.
AB - We have investigated the electric field effect on magneto-thermoelectric conversion in ultrathin Co films with a naturally-oxidized surface and a solid-state capacitor structure. By means of the thermoelectric imaging technique based on the lock-in thermography, we demonstrate the reversible on-off switching of heat currents generated by the anomalous Ettingshausen effect in response to the electric-field-induced magnetic phase transition in the Co films. The electric-field-induced switching property is found to be tuned by changing the Co thickness. Our finding will provide a method for reconfigurable and pin-point switching of thermoelectric conversion properties in spin-caloritronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85076791078&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85076791078&partnerID=8YFLogxK
U2 - 10.7567/1882-0786/ab55bb
DO - 10.7567/1882-0786/ab55bb
M3 - Article
AN - SCOPUS:85076791078
SN - 1882-0778
VL - 12
JO - Applied Physics Express
JF - Applied Physics Express
IS - 12
M1 - 123003
ER -