Electric-field-induced two-dimensional hole gas in undoped GaSb quantum wells

K. Shibata, M. Karalic, C. Mittag, T. Tschirky, C. Reichl, H. Ito, K. Hashimoto, T. Tomimatsu, Y. Hirayama, W. Wegscheider, T. Ihn, K. Ensslin

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5 Citations (Scopus)


We have measured hole transport in electrically induced two-dimensional hole gases in undoped GaSb/AlSb quantum wells. In order to access the electrically induced two-dimensional hole gas in GaSb quantum wells, recessed ohmic contacts were formed and the low-temperature magnetoresistance was measured for a gate-defined Hall bar geometry. The mobility of the sample increases with increasing hole density and reaches 20 000 cm2/V s at a hole density of 5.3 × 1011 cm-2 for an 8-nm-thick GaSb quantum well. The longitudinal and Hall resistivities show Shubnikov-de Haas oscillations and integer quantum Hall plateaus, respectively. These results establish a platform for realizing spin-based electronics using the strong spin-orbit interaction of this material and are also useful for understanding the transport properties of the two-dimensional topological insulator realized in InAs/GaSb double quantum well structures.

Original languageEnglish
Article number232102
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2019 Jun 10


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