Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions

Y. Nishitani; D. Chiba; M. Endo; F. Matsukura; H. Ohno

doi:10.1063/1.3295477

Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions

Y. Nishitani, D. Chiba, M. Endo, F. Matsukura, H. Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We have investigated the change of T_C of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T _C∝p^0.2 is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

Original language	English
Title of host publication	Physics of Semiconductors - 29th International Conference, ICPS 29
Pages	409-410
Number of pages	2
DOIs	https://doi.org/10.1063/1.3295477
Publication status	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil Duration: 2008 Jul 27 → 2008 Aug 1

Publication series

Name	AIP Conference Proceedings
Volume	1199
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	29th International Conference on Physics of Semiconductors, ICPS 29
Country/Territory	Brazil
City	Rio de Janeiro
Period	08/7/27 → 08/8/1

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10.1063/1.3295477

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Nishitani, Y., Chiba, D., Endo, M., Matsukura, F., & Ohno, H. (2009). Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 409-410). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295477

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title = "Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions",

abstract = "We have investigated the change of TC of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T C∝p0.2 is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.",

author = "Y. Nishitani and D. Chiba and M. Endo and F. Matsukura and H. Ohno",

year = "2009",

doi = "10.1063/1.3295477",

language = "English",

isbn = "9780735407367",

series = "AIP Conference Proceedings",

pages = "409--410",

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note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",

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Nishitani, Y, Chiba, D, Endo, M, Matsukura, F & Ohno, H 2009, Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions. in Physics of Semiconductors - 29th International Conference, ICPS 29. AIP Conference Proceedings, vol. 1199, pp. 409-410, 29th International Conference on Physics of Semiconductors, ICPS 29, Rio de Janeiro, Brazil, 08/7/27. https://doi.org/10.1063/1.3295477

Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions. / Nishitani, Y.; Chiba, D.; Endo, M. et al.
Physics of Semiconductors - 29th International Conference, ICPS 29. 2009. p. 409-410 (AIP Conference Proceedings; Vol. 1199).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions

AU - Nishitani, Y.

AU - Chiba, D.

AU - Endo, M.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2009

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N2 - We have investigated the change of TC of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T C∝p0.2 is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

AB - We have investigated the change of TC of ferromagnetic semiconductor (Ga, Mn)As by changing hole concentration p. The field effect transistor structure was utilized to change p. The relation T C∝p0.2 is obtained for three samples, despite the difference of their Mn composition and thickness, indicating that the relation holds over 2 decades of p.

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BT - Physics of Semiconductors - 29th International Conference, ICPS 29

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Y2 - 27 July 2008 through 1 August 2008

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Electric-field modulation of Curie temperature in (Ga,Mn)As field-effect transistor structures with varying channel thickness and Mn compositions

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