Electric properties of nanoscale contacts on Si(111) surfaces

R. Hasunuma, T. Komeda, H. Tokumoto

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We have investigated the electric properties of nanoscale contacts on Si(111)-7 × 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 1998 Jun


  • Electric properties
  • Indentation
  • Point contact
  • Si wire
  • Si(111)
  • STM


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