Electrical and infrared absorption studies on La-silicate/Si interface

Takuya Seki; Takamasa Kawanago; Kuniyuki Kakushima; Parhat Ahmet; Yoshinori Kataoka; Akira Nishiyama; Nobuyuki Sugii; Kazuo Tsutsui; Kenji Natori; Takeo Hattori; Hiroshi Iwai

doi:10.1109/ISNE.2013.6512286

Electrical and infrared absorption studies on La-silicate/Si interface

Takuya Seki, Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (D_it) down to 10¹⁰ cm^-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm ^-1 was found. We speculate that relaxation of SiO₄ networks in Lasilicates results in low D_it.

Original language	English
Pages	55-57
Number of pages	3
DOIs	https://doi.org/10.1109/ISNE.2013.6512286
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan, Province of China Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	13/2/25 → 13/2/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISNE.2013.6512286

Cite this

Seki, T., Kawanago, T., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Electrical and infrared absorption studies on La-silicate/Si interface. 55-57. Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, Province of China. https://doi.org/10.1109/ISNE.2013.6512286

Seki, T, Kawanago, T, Kakushima, K, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T & Iwai, H 2013, 'Electrical and infrared absorption studies on La-silicate/Si interface', Paper presented at 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, Taiwan, Province of China, 13/2/25 - 13/2/26 pp. 55-57. https://doi.org/10.1109/ISNE.2013.6512286

@conference{2b2de06f9ed1444489f3b8afd40a0e9b,

title = "Electrical and infrared absorption studies on La-silicate/Si interface",

abstract = "La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm -1 was found. We speculate that relaxation of SiO4 networks in Lasilicates results in low Dit.",

author = "Takuya Seki and Takamasa Kawanago and Kuniyuki Kakushima and Parhat Ahmet and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Kazuo Tsutsui and Kenji Natori and Takeo Hattori and Hiroshi Iwai",

year = "2013",

doi = "10.1109/ISNE.2013.6512286",

language = "English",

pages = "55--57",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

}

TY - CONF

T1 - Electrical and infrared absorption studies on La-silicate/Si interface

AU - Seki, Takuya

AU - Kawanago, Takamasa

AU - Kakushima, Kuniyuki

AU - Ahmet, Parhat

AU - Kataoka, Yoshinori

AU - Nishiyama, Akira

AU - Sugii, Nobuyuki

AU - Tsutsui, Kazuo

AU - Natori, Kenji

AU - Hattori, Takeo

AU - Iwai, Hiroshi

PY - 2013

Y1 - 2013

N2 - La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm -1 was found. We speculate that relaxation of SiO4 networks in Lasilicates results in low Dit.

AB - La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm -1 was found. We speculate that relaxation of SiO4 networks in Lasilicates results in low Dit.

UR - http://www.scopus.com/inward/record.url?scp=84877946796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877946796&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2013.6512286

DO - 10.1109/ISNE.2013.6512286

M3 - Paper

AN - SCOPUS:84877946796

SP - 55

EP - 57

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Electrical and infrared absorption studies on La-silicate/Si interface

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this