Hole-doped Sr1+xLa1-xFeO4 (0≤x≤0.3) samples were prepared, and electrical transport, magnetic properties and Fe57 Mössbauer spectra of the resulting materials were measured. The results were compared with those of hole-doped charge-transfer (CT) insulators. The antiferromagnetic Néel temperature decreased from ∼ 350 to ∼150 K on going from x=0 to 0.3, and dc electrical resistivity at room temperature decreased from ∼103 Ω cm for x=0 to ∼100 Ω cm for x=0.3. The heavily doped samples showed semiconducting behavior even for x=0.3. Seebeck voltage measurements demonstrated that all the samples were p-type semiconductors. Although the changes in the magnetic properties upon doping were qualitatively similar to the CT insulators such as (La,Sr)2CuO4 and (La,Sr)2NiO4, the changes in the electrical-transport properties upon doping differed from those in the CT insulators. The origin of these differences is discussed with reference to the changes in the electronic structure upon doping.