Electrical and magnetic properties of hole-doped Sr1+xLa1-xFeO4

Takahisa Omata, Kazushige Ueda, Hideo Hosono, Motomi Katada, Naoyuki Ueda, Hiroshi Kawazoe

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Hole-doped Sr1+xLa1-xFeO4 (0≤x≤0.3) samples were prepared, and electrical transport, magnetic properties and Fe57 Mössbauer spectra of the resulting materials were measured. The results were compared with those of hole-doped charge-transfer (CT) insulators. The antiferromagnetic Néel temperature decreased from ∼ 350 to ∼150 K on going from x=0 to 0.3, and dc electrical resistivity at room temperature decreased from ∼103 Ω cm for x=0 to ∼100 Ω cm for x=0.3. The heavily doped samples showed semiconducting behavior even for x=0.3. Seebeck voltage measurements demonstrated that all the samples were p-type semiconductors. Although the changes in the magnetic properties upon doping were qualitatively similar to the CT insulators such as (La,Sr)2CuO4 and (La,Sr)2NiO4, the changes in the electrical-transport properties upon doping differed from those in the CT insulators. The origin of these differences is discussed with reference to the changes in the electronic structure upon doping.

Original languageEnglish
Pages (from-to)10194-10199
Number of pages6
JournalPhysical Review B
Issue number15
Publication statusPublished - 1994


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