Electrical and optical properties of IrO2 thin films prepared by laser-ablation

Yuxue Liu, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)


IrO2 thin films were prepared by laser ablation using an Ir target at substrate temperatures (Tsub) from room temperature (RT) to 873 K in an oxygen atmosphere. A small amount of Ir metal was contained in IrO2 films prepared at Tsub, = RT. The lattice parameters particularly a-axis values decreased with increasing Tsub, and the values were a = 0.452 nm, c = 0.315 nm at Tsub = 873 K in agreement with those of bulk IrO2. The surface roughness increased from 1.2 to 5.2 nm with increasing Tsub. These values imply that the IrO 2 films were far smoother than those prepared by MOCVD and sputtering. The electrical conductivity of IrO2 films prepared at TSub = RT changed from semiconductor-like to metallic behavior after a heat-treatment; on the other hand, those prepared at Tsub > 573 K were metallic without changing after heat-treatment. The IrO2 films prepared at Tsub = 873 K showed the highest electrical conductivity of 37 × 10-8 ωm at RT. The optical transmittance of IrO2 thin films were mainly dependent on thickness and surface roughness, and were around 10% at a wavelength range from 300 to 800 nm.

Original languageEnglish
Pages (from-to)3023-3027
Number of pages5
JournalMaterials Transactions
Issue number10
Publication statusPublished - 2004 Oct


  • AFM
  • Glancing angle incidence X-ray diffraction
  • IrO film
  • Resistivity
  • Transmittance
  • X-ray photaelectron spectra


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