@inproceedings{caa4ae85b7e74d0284c35c074593c662,
title = "Electrical characteristics of SI-doped IGZO TFTs fabricated using ion implantation",
abstract = "Si was doped to a-IGZO films by ion implantation. Ha/I effect measurement shows that electron carrier density increased by Si doping. For the Si-implanted IGZO TFT. gate bias stability against negative bias temperature illumination stress was improved, while the mobility was almost the same level as that without Si doping.",
keywords = "IGZO, Negative bias illumination stress, Oxygen vacancy, Si ion implantation, Thin film transistor",
author = "Tetsuva Goto and Fuminobu Imaizumi and Shigetoshi Sugawa",
note = "Publisher Copyright: {\textcopyright} 2016 The Society for Information Display.; 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 ; Conference date: 07-12-2016 Through 09-12-2016",
year = "2016",
language = "English",
series = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
publisher = "Society for Information Display",
pages = "763--766",
booktitle = "23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016",
address = "United States",
}