TY - GEN
T1 - Electrical characteristics of SI-doped IGZO TFTs fabricated using ion implantation
AU - Goto, Tetsuva
AU - Imaizumi, Fuminobu
AU - Sugawa, Shigetoshi
N1 - Publisher Copyright:
© 2016 The Society for Information Display.
PY - 2016
Y1 - 2016
N2 - Si was doped to a-IGZO films by ion implantation. Ha/I effect measurement shows that electron carrier density increased by Si doping. For the Si-implanted IGZO TFT. gate bias stability against negative bias temperature illumination stress was improved, while the mobility was almost the same level as that without Si doping.
AB - Si was doped to a-IGZO films by ion implantation. Ha/I effect measurement shows that electron carrier density increased by Si doping. For the Si-implanted IGZO TFT. gate bias stability against negative bias temperature illumination stress was improved, while the mobility was almost the same level as that without Si doping.
KW - IGZO
KW - Negative bias illumination stress
KW - Oxygen vacancy
KW - Si ion implantation
KW - Thin film transistor
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UR - http://www.scopus.com/inward/citedby.url?scp=85050475421&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85050475421
T3 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
SP - 763
EP - 766
BT - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PB - Society for Information Display
T2 - 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Y2 - 7 December 2016 through 9 December 2016
ER -