Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

T. Kawanago; K. Tachi; J. Song; K. Kakushima; P. Ahmet; K. Tsutsui; N. Sugii; T. Hattori; H. Iwai

doi:10.1016/j.mee.2007.04.115

Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

T. Kawanago, K. Tachi, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that V_fb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.

Original language	English
Pages (from-to)	2235-2238
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	9-10
DOIs	https://doi.org/10.1016/j.mee.2007.04.115
Publication status	Published - 2007 Sept
Externally published	Yes

Keywords

High-k
MOSFET
Rare earth oxides
V shift

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2007.04.115

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title = "Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application",

abstract = "This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that Vfb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.",

keywords = "High-k, MOSFET, Rare earth oxides, V shift",

author = "T. Kawanago and K. Tachi and J. Song and K. Kakushima and P. Ahmet and K. Tsutsui and N. Sugii and T. Hattori and H. Iwai",

year = "2007",

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doi = "10.1016/j.mee.2007.04.115",

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T1 - Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

AU - Kawanago, T.

AU - Tachi, K.

AU - Song, J.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Sugii, N.

AU - Hattori, T.

AU - Iwai, H.

PY - 2007/9

Y1 - 2007/9

N2 - This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that Vfb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.

AB - This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that Vfb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.

KW - High-k

KW - MOSFET

KW - Rare earth oxides

KW - V shift

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SP - 2235

EP - 2238

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 9-10

ER -

Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

Abstract

Keywords

ASJC Scopus subject areas

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