Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Engineering

• Silicon 100%
• Nanowire 50%
• Field-Effect Transistor 20%
• Lithography 20%
• Integration 20%
• Induced Damage 10%
• Gate Oxide 10%
• Side Wall 10%
• Oxide Thickness 10%
• Periphery 10%
• Gate Length 10%
• Subthreshold Slope 10%
• Normalization 10%
• LSI Circuits 10%
• Si Nanowires 10%
• High Potential 10%
• Density 10%

Material Science

• Field Effect Transistors 100%
• Characterization 10%
• Electron Mobility 10%
• Etching 10%