@inproceedings{2a853e84eedf40c1b148fc344351fb65,
title = "Electrical conduction property at InAs/Si(111) interface by selective-area MOVPE",
abstract = "Ohmic I-V characteristics at interface between n-type InAs and n-type Si have been obtained. Single-domain InAs islands (1μm in diameter and 0.5 μm in height) have been grown epitaxially on Si(111) by selective-area MOVPE. After annealing, linear I-V characteristic was observed with excellent reproducibility and the current through the electrode depends on the number of InAs islands beneath the surface contact metal. The resistivity of InAs was estimated to be 0.0662 · cm. The value corresponds to a carrier concentration of approximately. 2 × 1016 cm-3. This is reasonable as the intrinsic carrier concentration for an un-doped InAs layer.",
keywords = "CCD image sensors, Indium compounds, epitaxial layers, infrared detectors, silicon, tunneling",
author = "S. Watanabe and K. Watanabe and Akio Higo and M. Sugiyama and Y. Nakano",
year = "2012",
month = dec,
day = "1",
doi = "10.1109/ICIPRM.2012.6403339",
language = "English",
isbn = "9781467317252",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "133--136",
booktitle = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012",
note = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 ; Conference date: 27-08-2012 Through 30-08-2012",
}