Electrical conductivity increase of Al-doped ZnO films induced by high-energy-heavy ions

H. Sugai, N. Matsunami, O. Fukuoka, M. Sataka, T. Kato, S. Okayasu, T. Shimura, M. Tazawa

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90 MeV Ni, 100 MeV Xe and 200 MeV Xe ions. The AZO films with c-axis orientation on SiO2-glass substrate were prepared by using a RF-sputter-deposition method at 400 °C. We find that the conductivity increases by two order of magnitude under high-energy-heavy ion irradiation, as has already been observed for 100 keV Ne ion irradiation. We also find that the efficiency of the conductivity enhancement, which is defined as the conductivity increment per a unit of ion fluence, scales super-linearly with the electronic stopping power (Se). The carrier density and mobility for unirradiated and irradiated AZO films are presented.

Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2 SPEC. ISS.
Publication statusPublished - 2006 Sept


  • Al-doped ZnO films
  • Conductivity
  • Electronic excitation
  • High-energy-heavy ion

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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