TY - JOUR
T1 - Electrical conductivity of BaTi4O9 film prepared by laser chemical vapor deposition method
AU - Guo, Dongyun
AU - Goto, Takashi
AU - Wang, Chuanbin
AU - Shen, Qiang
AU - Zhang, Lianmeng
N1 - Funding Information:
This work was supported in part by the Global COE Program of Materials Integration, Tohoku University, and by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470).
PY - 2012/6
Y1 - 2012/6
N2 - A BaTi 4O 9 film was prepared on a Pt/Ti/SiO 2/Si substrate by a laser chemical vapor deposition method and was investigated by impedance spectroscopy over ranges of temperature (300-1073 K) and frequency (10 2-10 7 Hz). Plots between real and imaginary parts of the impedance (Z′ and Z′′) suggest the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The conduction of both grains and grain boundaries obeys the Arrhenius format with activation energies of respectively 1.45 and 1.24 eV. The close activation energies indicate that the conduction in BaTi 4O 9 film is mainly by oxygen vacancies.
AB - A BaTi 4O 9 film was prepared on a Pt/Ti/SiO 2/Si substrate by a laser chemical vapor deposition method and was investigated by impedance spectroscopy over ranges of temperature (300-1073 K) and frequency (10 2-10 7 Hz). Plots between real and imaginary parts of the impedance (Z′ and Z′′) suggest the presence of two relaxation regimes, which were attributed to grain and grain boundary responses. The conduction of both grains and grain boundaries obeys the Arrhenius format with activation energies of respectively 1.45 and 1.24 eV. The close activation energies indicate that the conduction in BaTi 4O 9 film is mainly by oxygen vacancies.
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U2 - 10.1007/s00339-012-6798-5
DO - 10.1007/s00339-012-6798-5
M3 - Article
AN - SCOPUS:84862781400
SN - 0947-8396
VL - 107
SP - 739
EP - 742
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -