Electrical conductivity of Sc-doped TiO2 thin film prepared by RF magnetron sputtering

Tomohiro Inoue, Teppei Okumura, Yuichi Shimazu, Enju Sakai, Hiroshi Kumigashira, Tohru Higuchi

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6 Citations (Scopus)


We report the structural and electrical properties of a Sc 3+-doped TiO2 (Ti0.99Sc0.01O2%ä) thin film prepared by RF magnetron sputtering. The thin film prepared at 100 °C exhibits the anatase (112) peak, although the thin films prepared at temperature above 200 °C show the rutile (200) peak. The lattice constant of the a-axis decreases with substrate temperature owing to oxygen vacancies. The Sc3+ substitution and anatase structure were examined of the basis of Ti 2p and Sc 2p X-ray absorption spectra. The electrical conductivity of the Sc-doped TiO 2 thin film exhibits thermal activation-type behavior and oxygen partial pressure dependence. The conducting carriers at 500 and 600 °C are considered to be mixed hole- and electron-ion conductions, respectively. The conductivity may be closely related to the broad density of state (DOS) in the band-gap-energy region generated by Sc substitution

Original languageEnglish
Article number06JG03
JournalJapanese Journal of Applied Physics
Issue number6 SPEC. ISSUE
Publication statusPublished - 2014 Jun


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