TY - JOUR
T1 - Electrical conductivity of Sc-doped TiO2 thin film prepared by RF magnetron sputtering
AU - Inoue, Tomohiro
AU - Okumura, Teppei
AU - Shimazu, Yuichi
AU - Sakai, Enju
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
PY - 2014/6
Y1 - 2014/6
N2 - We report the structural and electrical properties of a Sc 3+-doped TiO2 (Ti0.99Sc0.01O2%ä) thin film prepared by RF magnetron sputtering. The thin film prepared at 100 °C exhibits the anatase (112) peak, although the thin films prepared at temperature above 200 °C show the rutile (200) peak. The lattice constant of the a-axis decreases with substrate temperature owing to oxygen vacancies. The Sc3+ substitution and anatase structure were examined of the basis of Ti 2p and Sc 2p X-ray absorption spectra. The electrical conductivity of the Sc-doped TiO 2 thin film exhibits thermal activation-type behavior and oxygen partial pressure dependence. The conducting carriers at 500 and 600 °C are considered to be mixed hole- and electron-ion conductions, respectively. The conductivity may be closely related to the broad density of state (DOS) in the band-gap-energy region generated by Sc substitution
AB - We report the structural and electrical properties of a Sc 3+-doped TiO2 (Ti0.99Sc0.01O2%ä) thin film prepared by RF magnetron sputtering. The thin film prepared at 100 °C exhibits the anatase (112) peak, although the thin films prepared at temperature above 200 °C show the rutile (200) peak. The lattice constant of the a-axis decreases with substrate temperature owing to oxygen vacancies. The Sc3+ substitution and anatase structure were examined of the basis of Ti 2p and Sc 2p X-ray absorption spectra. The electrical conductivity of the Sc-doped TiO 2 thin film exhibits thermal activation-type behavior and oxygen partial pressure dependence. The conducting carriers at 500 and 600 °C are considered to be mixed hole- and electron-ion conductions, respectively. The conductivity may be closely related to the broad density of state (DOS) in the band-gap-energy region generated by Sc substitution
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U2 - 10.7567/JJAP.53.06JG03
DO - 10.7567/JJAP.53.06JG03
M3 - Article
AN - SCOPUS:84903303532
SN - 0021-4922
VL - 53
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 SPEC. ISSUE
M1 - 06JG03
ER -