Electrical conductivity of SrRuO3 thin films prepared by laser ablation

Akihiko Ito; Hiroshi Masumoto; Takashi Goto

doi:10.4028/0-87849-960-1.1209

Electrical conductivity of SrRuO₃ thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

FRIS - Advanced Interdisciplinary Research Division

Tohoku University

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

SrRuO₃ (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (T_sub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10^-6 Pa) and in O₂ at oxygen pressures (Po₂) of 0.13 and 13 Pa. The films deposited at P = 10^-6 Pa and Po ₂ = 0.13 Pa were amorphous structure. At T_sub > 573 K and Po₂ = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing T_sub, the conductivity of SRO films increased from 7.7×10³ to 9.1×10₄ S·m^-1. The epitaxially grown SRO films on (100) SrTiO₃ substrates exhibited the highest conductivity of 1.8×10⁵ S·m^-1.

Original language	English
Pages (from-to)	1209-1212
Number of pages	4
Journal	Materials Science Forum
Volume	475-479
Issue number	II
DOIs	https://doi.org/10.4028/0-87849-960-1.1209
Publication status	Published - 2005
Event	PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2004 Nov 2 → 2004 Nov 5

Keywords

Conductive oxide
Electrical property
Epitaxial growth
Laser ablation
SrRuO
Thin film

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title = "Electrical conductivity of SrRuO3 thin films prepared by laser ablation",

abstract = "SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (Po2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and Po 2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and Po2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.",

keywords = "Conductive oxide, Electrical property, Epitaxial growth, Laser ablation, SrRuO, Thin film",

author = "Akihiko Ito and Hiroshi Masumoto and Takashi Goto",

year = "2005",

doi = "10.4028/0-87849-960-1.1209",

language = "English",

volume = "475-479",

pages = "1209--1212",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "II",

note = "PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing ; Conference date: 02-11-2004 Through 05-11-2004",

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TY - JOUR

T1 - Electrical conductivity of SrRuO3 thin films prepared by laser ablation

AU - Ito, Akihiko

AU - Masumoto, Hiroshi

AU - Goto, Takashi

PY - 2005

Y1 - 2005

N2 - SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (Po2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and Po 2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and Po2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

AB - SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (Po2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and Po 2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and Po2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

KW - Conductive oxide

KW - Electrical property

KW - Epitaxial growth

KW - Laser ablation

KW - SrRuO

KW - Thin film

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U2 - 10.4028/0-87849-960-1.1209

DO - 10.4028/0-87849-960-1.1209

M3 - Conference article

AN - SCOPUS:17044362249

SN - 0255-5476

VL - 475-479

SP - 1209

EP - 1212

JO - Materials Science Forum

JF - Materials Science Forum

IS - II

T2 - PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing

Y2 - 2 November 2004 through 5 November 2004

ER -

Electrical conductivity of SrRuO₃ thin films prepared by laser ablation

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Keywords

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