Electrical conductivity of SrRuO3 thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


SrRuO3 (SRO) thin films were prepared by laser ablation. The optimum preparation condition of highly electrically conductive SRO thin films was investigated. The substrate temperature (Tsub) was changed from room temperature to 973 K, and the deposition atmosphere was at a high vacuum (P = 10-6 Pa) and in O2 at oxygen pressures (Po2) of 0.13 and 13 Pa. The films deposited at P = 10-6 Pa and Po 2 = 0.13 Pa were amorphous structure. At Tsub > 573 K and Po2 = 13 Pa, well-crystallized pseudo-cubic SRO thin films with (110) orientation were obtained. With increasing Tsub, the conductivity of SRO films increased from 7.7×103 to 9.1×104 S·m-1. The epitaxially grown SRO films on (100) SrTiO3 substrates exhibited the highest conductivity of 1.8×105 S·m-1.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalMaterials Science Forum
Issue numberII
Publication statusPublished - 2005
EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
Duration: 2004 Nov 22004 Nov 5


  • Conductive oxide
  • Electrical property
  • Epitaxial growth
  • Laser ablation
  • SrRuO
  • Thin film


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