Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer

Shuji Tanaka; Mamoru Mohri; Toshinori Ogashiwa; Hideyuki Fukushi; Katsunao Tanaka; Daisuke Nakamura; Takashi Nisimori; Masayoshi Esashi

doi:10.1109/TRANSDUCERS.2011.5969467

Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer

Shuji Tanaka, Mamoru Mohri, Toshinori Ogashiwa, Hideyuki Fukushi, Katsunao Tanaka, Daisuke Nakamura, Takashi Nisimori, Masayoshi Esashi

ENG - Robotics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

An anodically-bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical connection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100 % yield of both electrical connection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical connection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated. This method dispenses with the fabrication of the porous Au bumps by users, which includes non-standard processes.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	342-345
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969467
Publication status	Published - 2011 Sept 1
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: 2011 Jun 5 → 2011 Jun 9

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	11/6/5 → 11/6/9

Keywords

Anodic bonding
Au bump
LTCC wafer
Packaging

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/TRANSDUCERS.2011.5969467

Cite this

Tanaka, S., Mohri, M., Ogashiwa, T., Fukushi, H., Tanaka, K., Nakamura, D., Nisimori, T., & Esashi, M. (2011). Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 342-345). [5969467] (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969467

Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer. / Tanaka, Shuji; Mohri, Mamoru; Ogashiwa, Toshinori et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 342-345 5969467 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, S, Mohri, M, Ogashiwa, T, Fukushi, H, Tanaka, K, Nakamura, D, Nisimori, T & Esashi, M 2011, Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969467, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 342-345, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 11/6/5. https://doi.org/10.1109/TRANSDUCERS.2011.5969467

Tanaka S, Mohri M, Ogashiwa T, Fukushi H, Tanaka K, Nakamura D et al. Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 342-345. 5969467. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969467

Tanaka, Shuji ; Mohri, Mamoru ; Ogashiwa, Toshinori et al. / Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 342-345 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

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abstract = "An anodically-bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical connection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100 % yield of both electrical connection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical connection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated. This method dispenses with the fabrication of the porous Au bumps by users, which includes non-standard processes.",

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AU - Fukushi, Hideyuki

AU - Tanaka, Katsunao

AU - Nakamura, Daisuke

AU - Nisimori, Takashi

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AB - An anodically-bondable low temperature cofired ceramic (LTCC) wafer offers a versatile, clean and reliable wafer-level hermetic packaging for MEMS. This paper reports electrical connection in parallel with anodic bonding between MEMS on a Si wafer and vias in the LTCC wafer using porous Au bump. The Au bump is made of submicron Au particles, and so compliant as it easily absorbs large height difference. The LTCC wafer with the Au bumps and an SOI wafer with Au/Pt/Cr pads and diaphragms were anodically bonded. 100 % yield of both electrical connection and hermetic sealing was demonstrated. Heat cycle test confirmed the reliability of both electrical connection and hermeticity. In addition, the transfer of the porous Au bumps from a mother glass wafer to a target LTCC wafer was demonstrated. This method dispenses with the fabrication of the porous Au bumps by users, which includes non-standard processes.

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Electrical connection using submicron porous gold bumps for wafer-level packaging of mems using anodically-bondable LTCC wafer

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Keywords

ASJC Scopus subject areas

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