The authors have fabricated field-effect transistor structures with a ferromagnetic Ga1-x Mnx As channel having Mn composition of x=0.027-0.200. The samples with larger x have higher Curie temperature TC and hole concentration p, while the controllable range of TC by applying external electric field does not increase with x. x dependence of effective Mn composition is also described.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2008|
ASJC Scopus subject areas
- Physics and Astronomy(all)