Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

Y. Nishitani; D. Chiba; F. Matsukura; H. Ohno

doi:10.1063/1.2838159

Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The authors have fabricated field-effect transistor structures with a ferromagnetic Ga1-x Mnx As channel having Mn composition of x=0.027-0.200. The samples with larger x have higher Curie temperature TC and hole concentration p, while the controllable range of TC by applying external electric field does not increase with x. x dependence of effective Mn composition is also described.

Original language	English
Article number	07D139
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2838159
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2838159

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title = "Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200",

abstract = "The authors have fabricated field-effect transistor structures with a ferromagnetic Ga1-x Mnx As channel having Mn composition of x=0.027-0.200. The samples with larger x have higher Curie temperature TC and hole concentration p, while the controllable range of TC by applying external electric field does not increase with x. x dependence of effective Mn composition is also described.",

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AU - Chiba, D.

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AU - Ohno, H.

PY - 2008

Y1 - 2008

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AB - The authors have fabricated field-effect transistor structures with a ferromagnetic Ga1-x Mnx As channel having Mn composition of x=0.027-0.200. The samples with larger x have higher Curie temperature TC and hole concentration p, while the controllable range of TC by applying external electric field does not increase with x. x dependence of effective Mn composition is also described.

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Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

Abstract

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