Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Shin Ichi Amma; Yuki Tokumoto; Keiichi Edagawa; Naoya Shibata; Teruyasu Mizoguchi; Takahisa Yamamoto; Yuichi Ikuhara

doi:10.1063/1.3429604

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Shin Ichi Amma, Yuki Tokumoto, Keiichi Edagawa, Naoya Shibata, Teruyasu Mizoguchi, Takahisa Yamamoto, Yuichi Ikuhara

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

Original language	English
Article number	193109
Journal	Applied Physics Letters
Volume	96
Issue number	19
DOIs	https://doi.org/10.1063/1.3429604
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3429604

Cite this

@article{e7ad4125096e469a970d046836fd1729,

title = "Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique",

abstract = "Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.",

author = "Amma, {Shin Ichi} and Yuki Tokumoto and Keiichi Edagawa and Naoya Shibata and Teruyasu Mizoguchi and Takahisa Yamamoto and Yuichi Ikuhara",

note = "Funding Information: This work was supported in part by the Grant-in-Aid for Scientific Research on Priority Areas “Nano Materials Science for Atomic-scale Modification 474” (Grants No. 19053001, 22686059) from the Ministry of Education, Culture, Sports, and Technology (MEXT) of Japan. Y.T. was supported as a Japan Society for the Promotion of Science (JSPS) research fellow. N.S. acknowledges support from PRESTO, Japan Science and Technology Agency.",

year = "2010",

doi = "10.1063/1.3429604",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

AU - Amma, Shin Ichi

AU - Tokumoto, Yuki

AU - Edagawa, Keiichi

AU - Shibata, Naoya

AU - Mizoguchi, Teruyasu

AU - Yamamoto, Takahisa

AU - Ikuhara, Yuichi

N1 - Funding Information: This work was supported in part by the Grant-in-Aid for Scientific Research on Priority Areas “Nano Materials Science for Atomic-scale Modification 474” (Grants No. 19053001, 22686059) from the Ministry of Education, Culture, Sports, and Technology (MEXT) of Japan. Y.T. was supported as a Japan Society for the Promotion of Science (JSPS) research fellow. N.S. acknowledges support from PRESTO, Japan Science and Technology Agency.

PY - 2010

Y1 - 2010

N2 - Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

AB - Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

UR - http://www.scopus.com/inward/record.url?scp=77953001940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953001940&partnerID=8YFLogxK

U2 - 10.1063/1.3429604

DO - 10.1063/1.3429604

M3 - Article

AN - SCOPUS:77953001940

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193109

ER -

Electrical current flow at conductive nanowires formed in GaN thin films by a dislocation template technique

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this