In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high carrier concentration of 7.1×1019 cm−3 with Hall mobility of 19 cm2 V−1 s−1 was measured at room temperature. Moreover, good rectifying characteristics was obtained for a Si p+/n junction diode. Especially for exploration of a heavily B-doped Si film, depth profiling results show that B concentration tends to be smaller near the initial substrate surface. Finally, effective control of B segregation by atomic-order B pre-deposition or by Si buffer deposition on initial Si(100) has been demonstrated to achieve heavy B doping in whole region of deposited Si film.
- Depth profile
- Epitaxial growth: silicon
- In-situ boron doping
- Plasma chemical vapor deposition
- pn junction diode